scholarly journals Влияние металлических масок на согласование нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 47 (11) ◽  
pp. 44
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Reflection Coefficient ◽  
High Frequency ◽  
Reactive Power ◽  
Reactive Ion Etching ◽  
Substrate Holder ◽  
Lower Electrode ◽  
Ion Etching ◽  
Power Reflection Coefficient ◽  
Power Component

The effect of metal masks on the matching of the lower electrode with a high-frequency bias generator during selective reactive-ion etching through the mask of massive substrates in freon-14 has been studied theoretically and experimentally. It is shown that masks with a substrate coating above 30% lead to an increase in the reactive power component at distances from the center close to the substrate radius. The absence of influence on the specific reactive power of the thickness and material of the masks is established. It is experimentally shown that masks with any practically significant coating coefficient of the substrate, connected to the lower electrode through the substrate holder, improve the matching, reducing the power reflection coefficient.

scholarly journals Особенности согласования нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 91 (4) ◽  
pp. 657
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Numerical Simulation ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Substrate Holder ◽  
Rf Power ◽  
Special Design ◽  
Reactive Component ◽  
Lower Electrode ◽  
Ion Etching ◽  
Simulation Results

This paper presents theoretical and experimental results on reactive ion etching of massive substrates in freon-14 with RF bias at the lower electrode. A hypothesis is proposed according to which a large-sized substrate violates the matching of the lower electrode with the RF generator by adding an additional reactive component to the impedance of the lower electrode. A numerical simulation of reactive ion etching with substrates of various sizes in a CF4 environment is performed . The simulation results showed a significant increase in the reactive component of RF power at the lower electrode if the substrate area exceeds 50% of the area of the lower electrode, which is consistent with the proposed hypothesis. It has been experimentally shown that the etching of massive substrates violates the matching of the lower electrode with the RF generator. A special design of the substrate holder for massive substrates has been developed. It is shown that such a substrate holder significantly improves the matching of the RF generator with the lower electrode, especially when adding 0.3-0.9 l/h argon to the plasma-forming mixture.

Damage free Al reactive-ion-etching for high frequency SAW devices

2003 ◽  
Author(s):  
A. Yuhara ◽  
T. Mizutani ◽  
N. Hosaka ◽  
J. Yamada ◽  
A. Iwama
Keyword(s):  
High Frequency ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Saw Devices

GaAs Photonic Crystals on SiO2Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6259-6263 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Masaya Notomi ◽  
Toshiaki Tamamura ◽  
Satoshi Kodama ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Wafer Bonding ◽  
High Frequency ◽  
Reactive Ion Etching ◽  
Very High Frequency ◽  
Ion Etching ◽  
Very High

scholarly journals Влияние асимметрии расположения металлических масок на согласование нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 55 (12) ◽  
pp. 1255
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Charge Density ◽  
Current Density ◽  
High Frequency ◽  
Sharp Increase ◽  
Reactive Power ◽  
Lower Electrode ◽  
Near Surface ◽  
Electric Charge Density ◽  
Chemically Active Plasma ◽  
Theoretical Results

The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching
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