Adsorbates in ambient operated scanning tunneling microscopy: Their appearance, mobility during scanning, and role in surface diffusion measurements

1994 ◽  
Vol 12 (3) ◽  
pp. 1805 ◽  
Author(s):  
P. A. Campbell
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Scanning-tunneling-microscopy study of the surface diffusion of sulfur on Re(0001)

1993 ◽  
Vol 47 (4) ◽  
pp. 2320-2328 ◽  
Author(s):  
J. C. Dunphy ◽  
P. Sautet ◽  
D. F. Ogletree ◽  
O. Dabbousi ◽  
M. B. Salmeron
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Study

SCANNING TUNNELING MICROSCOPY DETERMINATION OF SURFACE DIFFUSION BY DIRECT MEASUREMENT OF DISPLACEMENT DISTRIBUTION

1994 ◽  
Vol 08 (03) ◽  
pp. 137-142
Author(s):  
Y.W. MO
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Direct Measurement ◽  
Anisotropic Diffusion ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Displacement Distribution ◽  
Microscopy Method

A scanning tunneling microscopy method for studying surface diffusion is developed based on measurements of the displacement distribution of adsorbates by “image-anneal-image” cycles which allow direct observation of diffusion process while avoiding potential STM-tip effects. The method is used to study the anisotropic diffusion of Sb dimers on Si(001).

Morphological Changes to InAs Quantum Dots Caused by GaAs Overgrowth

1999 ◽  
Vol 571 ◽  
Author(s):  
J.B. Smathers ◽  
P. Ballet ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Morphological Changes ◽  
Scanning Tunneling ◽  
Morphological Instability ◽  
Tunneling Microscopy ◽  
Specific Mechanism ◽  
Inas Quantum Dots

ABSTRACTWe have used in-situ scanning tunneling microscopy (STM) to study the morphological changes to InAs quantum dots (QD's) caused by overgrowth of a GaAs capping layer. We demonstrate that the InAs islands are highly unstable during GaAs overgrowth and that this morphological instability confirms that significant cation intermixing occurs during overgrowth. In particular, the anisotropic nature of the volume redistribution indicates that In surface diffusion is the specific mechanism of In transfer away from the islands. Images taken after 10 monolayers or more of overgrowth reveal that more rapid GaAs overgrowth better preserves the 3D-islands morphology.

Surface Diffusion: Atomistics and Surface Morphology (Summary of MRS Symposium B Panel Discussion)

1992 ◽  
Vol 280 ◽  
Author(s):  
M. H. Grabow ◽  
P. J. Feibelman ◽  
G. H. Gilmer ◽  
B. H. Cooper ◽  
Y. W. Mo
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Computer Modeling ◽  
Surface Diffusion ◽  
Panel Discussion ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Modeling Techniques

ABSTRACTThis paper gives some of the highlights of a panel discussion on surface diffusion held Monday, November 30, 1992 at the Fall MRS Meeting in Boston, Massachusetts. Four invited speakers discussed computer modeling techniques and scanning tunneling microscopy experiments that have been used to provide new understanding of the atomistic processes that occur at surfaces. We present a summary of each of the invited talks, indicate other presentations on surface diffusion in this proceedings, and provide a transcript of the two discussion sessions.

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