High phosphorus doping of epitaxial silicon at low temperature and very low pressure

1996 ◽  
Vol 14 (4) ◽  
pp. 2690
Author(s):  
X. D. Huang
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
Epitaxial Silicon ◽  
Phosphorus Doping ◽  
High Phosphorus

High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure

1991 ◽  
Vol 58 (17) ◽  
pp. 1896-1898 ◽  
Author(s):  
T. O. Sedgwick ◽  
P. D. Agnello ◽  
D. Nguyen Ngoc ◽  
T. S. Kuan ◽  
G. Scilla
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Epitaxial Silicon ◽  
Phosphorus Doping ◽  
High Phosphorus

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

CHEMISORPTION OF CO AND METHANATION ON Rh SURFACES AT LOW TEMPERATURE AND LOW PRESSURE, AN ATOM-PROBE FIM STUDY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-487-C6-492
Author(s):  
W. Liu ◽  
D. M. Ren ◽  
C. L. Bao ◽  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Atom Probe ◽  
Low Pressure

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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