Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF[sub 3]/Ar plasma

1997 ◽  
Vol 15 (3) ◽  
pp. 623 ◽  
Author(s):  
G. Adegboyega
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Gate Oxide ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Oxide Etching ◽  
Ar Plasma ◽  
Transient Spectroscopy

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

scholarly journals Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

1992 ◽  
Vol 82 (5) ◽  
pp. 841-844
Author(s):  
A. Babiński ◽  
J. Przybytek ◽  
M. Baj ◽  
P. Omling ◽  
L. Samuelson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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