Deep-Level Transient Spectroscopy Study of Hydrogen-Related Traps Formed by Wet Chemical Etching in Electron-Irradiated n-Type Silicon

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1815-1816 ◽  
Author(s):  
Yutaka Tokuda
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Chemical Etching ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Transient Spectroscopy

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 260-264 ◽  
Author(s):  
Elie Badr ◽  
Peter Pichler ◽  
Gerhard Schmidt
Keyword(s):  
Band Gap ◽  
Deep Level Transient Spectroscopy ◽  
Chemical Etching ◽  
Deep Level ◽  
Schottky Diodes ◽  
Energy Levels ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Transient Spectroscopy

Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.

Formation of Hydrogen-Related Traps in Electron-Irradiated N-type Silicon by Wet Chemical Etching

1998 ◽  
Vol 513 ◽  
Author(s):  
Yutaka Tokuda ◽  
Hitoshi Shimada
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Chemical Etching ◽  
Deep Level ◽  
Electron Trap ◽  
Light Illumination ◽  
Hydrogen Atoms ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Transient Spectroscopy

ABSTRACTInteraction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NHI electron trap (Ec – 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NHI is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen.

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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