More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs
1999 ◽
Vol 17
(5)
◽
pp. 2019
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Keyword(s):
1994 ◽
Vol 33
(Part 2, No. 3B)
◽
pp. L405-L408
◽
Keyword(s):
1996 ◽
Vol 35
(Part 1, No. 3)
◽
pp. 1630-1636
◽