Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
1996 ◽
Vol 35
(Part 1, No. 3)
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pp. 1630-1636
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Keyword(s):
2013 ◽
Vol 25
(6)
◽
pp. 1523-1526
1994 ◽
Vol 33
(Part 2, No. 3B)
◽
pp. L405-L408
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Keyword(s):