Structural analysis of organic ultrathin-layer by using Ar-gas-cluster ion beam sputter collecting method

2020 ◽  
Vol 38 (3) ◽  
pp. 034003
Author(s):  
Hiroyuki Noda ◽  
Yoshiteru Sasaki ◽  
Daigo Murai ◽  
Masaki Hachiya
Keyword(s):  
Structural Analysis ◽  
Ion Beam ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Ultrathin Layer

Ar gas cluster ion beam assisted XPS study of LiNbO3 Z cut surface

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  
Keyword(s):  
Ion Beam ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Xps Study ◽  
Cut Surface

Fabrication of Bevel Structures by Means of the Spatial Gradient of Ion Dose in Ar Gas Cluster Ion Beam and Its Unique Characteristics

2018 ◽  
Vol 5 (23) ◽  
pp. 1800825
Author(s):  
Dong‐Jin Yun ◽  
Youngsik Shin ◽  
Chang Hoon Jung ◽  
Jae Cheol Lee ◽  
Sunjung Byun ◽  
...  
Keyword(s):  
Ion Beam ◽  
Spatial Gradient ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

scholarly journals Elastic modulus measurement of ultrathin layer using gas cluster ion beam

2021 ◽  
Vol 15 (6) ◽  
pp. JAMDSM0076-JAMDSM0076
Author(s):  
Hiroshi TANI ◽  
Renguo LU ◽  
Shinji KOGANEZAWA ◽  
Norio TAGAWA
Keyword(s):  
Elastic Modulus ◽  
Ion Beam ◽  
Cluster Ion ◽  
Modulus Measurement ◽  
Gas Cluster Ion Beam ◽  
Ultrathin Layer

Effect of energy per atom (E/n) on the Ar gas cluster ion beam (Ar-GCIB) and O2+ cosputter process

The Analyst ◽  
2019 ◽  
Vol 144 (10) ◽  
pp. 3323-3333 ◽  
Author(s):  
Shin-Kung Wang ◽  
Hsun-Yun Chang ◽  
Yi-Hsuan Chu ◽  
Wei-Lun Kao ◽  
Chen-Yi Wu ◽  
...  
Keyword(s):  
Ion Beam ◽  
Soft Materials ◽  
Molecular Structures ◽  
Ion Sputtering ◽  
Promising Technique ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

With optimization, GCIB-O2+ cosputter is a promising technique for preserving molecular structures during ion sputtering and successfully profiled soft materials.

scholarly journals XPS Analysis of BaTiO3 Single Crystal Cleaned by Ar Gas Cluster Ion Beam

2015 ◽  
Vol 22 (2) ◽  
pp. 103-109
Author(s):  
Masashi Seki ◽  
Hiromi Tanaka ◽  
Noriyuki Kataoka ◽  
Satoru Kishida
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Xps Analysis ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering

2020 ◽  
Vol 514 ◽  
pp. 145903 ◽  
Author(s):  
O. Romanyuk ◽  
I. Gordeev ◽  
A. Paszuk ◽  
O. Supplie ◽  
J.P. Stoeckmann ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Interface Study

scholarly journals Applications of Ar Gas Cluster Ion Beam to Oxide Thin Films

2015 ◽  
Vol 22 (2) ◽  
pp. 97-103
Author(s):  
Chanae Park ◽  
Hongchol Chae ◽  
Nam Seok Park ◽  
Hee Jae Kang
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Oxide Thin Films ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

X-ray Photoelectron Spectroscopy Study of Diamond-Like Carbon Thin Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

2008 ◽  
Vol 47 (5) ◽  
pp. 3380-3383 ◽  
Author(s):  
Yuichi Haruyama ◽  
Teruyuki Kitagawa ◽  
Kazuhiro Kanda ◽  
Shinji Matsui ◽  
Tatsuo Gejo ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion ◽  
Carbon Thin Films ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

RSC Advances ◽  
2015 ◽  
Vol 5 (95) ◽  
pp. 77814-77822 ◽  
Author(s):  
Dong-Jin Yun ◽  
Taeho Shin ◽  
SungJun Park ◽  
Youngsik Shin ◽  
YongKoo Kyung ◽  
...  
Keyword(s):  
Energy Level ◽  
Organic Semiconductor ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Level Control ◽  
Beam Sputtering ◽  
Cluster Ion ◽  
Semiconductor Electrode ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.

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