scholarly journals Elastic modulus measurement of ultrathin layer using gas cluster ion beam

2021 ◽  
Vol 15 (6) ◽  
pp. JAMDSM0076-JAMDSM0076
Author(s):  
Hiroshi TANI ◽  
Renguo LU ◽  
Shinji KOGANEZAWA ◽  
Norio TAGAWA
Author(s):  
J. Bachand ◽  
A. Freytsis ◽  
E. Harrington ◽  
M. Gwinn ◽  
N. Hofmeester ◽  
...  

Author(s):  
N. Toyoda ◽  
l. Yamada ◽  
S. Akiyama ◽  
L.C. Kimerling ◽  
Y. Ishikawa ◽  
...  

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  

2000 ◽  
Vol 614 ◽  
Author(s):  
D.B. Fenner ◽  
J. Hautala ◽  
L.P. Allen ◽  
J.A. Greer ◽  
W.J. Skinner ◽  
...  

ABSTRACTThin-film magnetic sensor and memory devices in future generations may benefit from a processing tool for final-step etching and smoothing of surfaces to nearly an atomic scale. Gas-cluster ion-beam (GCIB) systems make possible improved surface sputtering and processing for many types of materials. We propose application of GCIB processing as a key smoothing step in thin-film magnetic-materials technology, especially spin-valve GMR. Results of argon GCIB etching and smoothing of surfaces of alumina, silicon, permalloy and tantalum films are reported. No accumulating roughness or damage is observed. The distinct scratches and tracks seen in atomic-force microscopy of CMP-processed surfaces, are removed almost entirely by subsequent GCIB processing. The technique primarily reduces high spatial-frequency roughness and renders the topographic surface elevations more nearly gaussian (randomly distributed).


Author(s):  
H. Chen ◽  
S.W. Liu ◽  
X.M. Wang ◽  
M.N. Iliev ◽  
C.L. Chen ◽  
...  

2018 ◽  
Vol 24 (S1) ◽  
pp. 1444-1445 ◽  
Author(s):  
Kenneth J. Hayworth ◽  
David Peale ◽  
Zhiyuan Lu ◽  
C. Shan Xu ◽  
Harald F. Hess

2018 ◽  
Vol 5 (23) ◽  
pp. 1800825
Author(s):  
Dong‐Jin Yun ◽  
Youngsik Shin ◽  
Chang Hoon Jung ◽  
Jae Cheol Lee ◽  
Sunjung Byun ◽  
...  

1999 ◽  
Vol 585 ◽  
Author(s):  
D. B. Fenner ◽  
R. P. Torti ◽  
L. P. Allen ◽  
N. Toyoda ◽  
A. R. Kirkpatrick ◽  
...  

AbstractSurface processing of microelectronic materials by bombardment with nanoparticles of condensed gases (i.e., clusters) in the form of an ion beam, makes possible etching and smoothing of those surfaces to very high figures of merit. As this is not possible with any conventional ion method, gas-cluster ion-beam systems have great potential in manufacturing. The formation of gas clusters and their collision with surfaces provides an interesting arena for novel physics and surface science. This paper outlines a physical model for the clusters and surface interactions, and provides examples of surface processing. In particular, the reduction of surface roughness while etching by cluster-ion bombardment is illustrated for various materials utilized in microelectronics.


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