Molecular beam epitaxy growth of low-bandgap material thick films using a molybdenum disilicide coated backing plate for substrate temperature control

2021 ◽  
Vol 39 (1) ◽  
pp. 014001
Author(s):  
Adrian Podpirka ◽  
Michael Brupbacher ◽  
Christine Zgrabik ◽  
Jarod C. Gagnon ◽  
David Shrekenhamer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Control ◽  
Molecular Beam ◽  
Thick Films ◽  
Molybdenum Disilicide ◽  
Molecular Beam Epitaxy Growth ◽  
Low Bandgap ◽  
Backing Plate

Simulations of molecular beam epitaxy growth of GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Zhang ◽  
B. G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
High Surface ◽  
Molecular Beam Epitaxy Growth ◽  
Smooth Surfaces ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Key Aspects

AbstractNumerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometry

1995 ◽  
Vol 150 ◽  
pp. 54-61 ◽  
Author(s):  
F.G. Boebel ◽  
H. Möller ◽  
B. Hertel ◽  
H. Grothe ◽  
G. Schraud ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Temperature Control ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

scholarly journals Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

2007 ◽  
Vol 102 (8) ◽  
pp. 083536 ◽  
Author(s):  
V. Novák ◽  
K. Olejník ◽  
M. Cukr ◽  
L. Smrčka ◽  
Z. Remeš ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Temperature Changes

Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

2015 ◽  
Vol 86 (1) ◽  
pp. 014904 ◽  
Author(s):  
T. Hutchins ◽  
M. Nazari ◽  
M. Eridisoorya ◽  
T. M. Myers ◽  
M. Holtz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Chamber ◽  
Molecular Beam Epitaxy Growth
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