Reliable substrate temperature measurements for high temperature AlGaAs molecular-beam epitaxy growth

1995 ◽  
Vol 13 (2) ◽  
pp. 290 ◽  
Author(s):  
S. Strite
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Temperature Measurements ◽  
Molecular Beam Epitaxy Growth

Simulations of molecular beam epitaxy growth of GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Zhang ◽  
B. G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
High Surface ◽  
Molecular Beam Epitaxy Growth ◽  
Smooth Surfaces ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Key Aspects

AbstractNumerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

scholarly journals Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

2007 ◽  
Vol 102 (8) ◽  
pp. 083536 ◽  
Author(s):  
V. Novák ◽  
K. Olejník ◽  
M. Cukr ◽  
L. Smrčka ◽  
Z. Remeš ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Temperature Changes

Development of High Temperature Electron Bombardment Evaporator for Ultra-High Vacuum

2012 ◽  
Vol 566 ◽  
pp. 608-611
Author(s):  
Sheng Fang Zhang ◽  
Jing Pei Liu ◽  
Guan Hua Zhang ◽  
Mei Hua Yang ◽  
Ai Ling Han ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Vacuum ◽  
Electron Bombardment ◽  
Heating Power ◽  
Ultra High Vacuum ◽  
Molecular Beam Epitaxy Growth ◽  
Thermal Equilibrium State ◽  
Short Time

To improve the techniques of molecular beam epitaxy, the electron bombardment evaporator for high temperature evaporation in ultra-high vacuum is designed, and then its performances, such as power-temperature relationship, stability of beam flux as well as molecular beam distribution, are tested by using Ag source. Through adjusting the electric current of tungsten filament can achieve the remarkable heating power in high-voltage, and the crucible temperature rises with increasing heating power, and it exceeds 1600°C at around 60W. The evaporator can reach thermal equilibrium state in a quite short time and produce a highly stable beam flux of Ag at low deposition rate. A 9mm diameter homogeneous flux platform area is obtained at the position 60mm away from the nozzle, and this area can provide high quality beam flux for molecular beam epitaxy. These results show, the electron bombardment evaporator can meet the demands for ultra-high vacuum molecular beam epitaxy growth completely.

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