Molecular dynamics simulation on selective etching of α -quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process

Author(s):

Abdul Haadi Abdul Manap ◽

Khairudin Mohamed

Keyword(s):

Molecular Dynamics ◽

Quartz Substrate ◽

Ion Bombardment ◽

Dry Etching ◽

Low Energy ◽

Dynamics Simulation ◽

Argon Ion Bombardment ◽

Amorphous Quartz ◽

Molecular dynamics simulation on the influence of quartz substrate temperature on low energy Argon ion bombardment model in dry etching process

10.1063/1.4915746 ◽

2015 ◽

Author(s):

A. H. Abdul Manap ◽

K. Mohamed

Keyword(s):

Molecular Dynamics ◽

Substrate Temperature ◽

Quartz Substrate ◽

Ion Bombardment ◽

Dry Etching ◽

Low Energy ◽

Dynamics Simulation ◽

Argon Ion Bombardment ◽

Molecular dynamics simulation of bipartite bimetallic clusters under low-energy argon ion bombardment

Physics of the Solid State ◽

10.1134/s1063783416020281 ◽

2016 ◽

Vol 58 (2) ◽

pp. 387-393 ◽

Cited By ~ 6

Author(s):

D. V. Shirokorad ◽

G. V. Kornich ◽

S. G. Buga

Keyword(s):

Molecular Dynamics ◽

Ion Bombardment ◽

Low Energy ◽

Dynamics Simulation ◽

Bimetallic Clusters ◽

Argon Ion Bombardment ◽

Mechanism for anisotropic ejection of atoms from fcc (100) metal surface by low-energy argon ion bombardment: Molecular dynamics simulation

Vacuum ◽

10.1016/j.vacuum.2021.110524 ◽

2021 ◽

Vol 193 ◽

pp. 110524

Author(s):

Guo Zhu ◽

Wenyu Liu ◽

Zhiyin Gan ◽

Baijun Xiao

Keyword(s):

Molecular Dynamics ◽

Metal Surface ◽

Ion Bombardment ◽

Low Energy ◽

Dynamics Simulation ◽

Argon Ion Bombardment ◽

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

Molecular dynamics simulation of mass transport processes in a Ni crystal with Al atoms as impurity under low energy ion bombardment

10.1016/s0168-583x(00)00424-9 ◽

2001 ◽

Vol 173 (4) ◽

pp. 417-426 ◽

Cited By ~ 2

Author(s):

G.V Kornich ◽

G Betz ◽

A.I Bazhin

Keyword(s):

Molecular Dynamics ◽

Mass Transport ◽

Ion Bombardment ◽

Transport Processes ◽

Low Energy ◽

Dynamics Simulation

Molecular dynamics simulation of defect formation in an aluminum crystal under low-energy ion bombardment

Physics of the Solid State ◽

10.1134/1.1340181 ◽

2001 ◽

Vol 43 (1) ◽

pp. 29-34 ◽

Author(s):

G. V. Kornich ◽

G. Betz ◽

A. I. Bazhin

Keyword(s):

Molecular Dynamics ◽

Defect Formation ◽

Ion Bombardment ◽

Low Energy ◽

Dynamics Simulation ◽

Aluminum Crystal

Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: molecular dynamics simulation

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01905-4 ◽

2002 ◽

Vol 237-239 ◽

pp. 217-222 ◽

Cited By ~ 5

Author(s):

Dong Ho Kim ◽

Seung Yup Lee ◽

Do Hyun Kim

Keyword(s):

Molecular Dynamics ◽

Silicon Dioxide ◽

Ion Bombardment ◽

Low Energy ◽

Dynamics Simulation ◽

Plasma Sputtering

Molecular dynamics simulations of GaAs sputtering under low-energy argon ion bombardment

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2836408 ◽

2008 ◽

Vol 26 (2) ◽

pp. 274-280 ◽

Cited By ~ 10

Author(s):

Emilie Despiau-Pujo ◽

Pascal Chabert ◽

David B. Graves

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulations ◽

Ion Bombardment ◽

Low Energy ◽

Argon Ion Bombardment ◽

Dynamics Simulations ◽

Sputtering of Fe(100) due to low-energy ion bombardments: Molecular dynamics simulation

Scripta Materialia ◽

10.1016/j.scriptamat.2006.08.006 ◽

2006 ◽

Vol 55 (11) ◽

pp. 1043-1046 ◽

Author(s):

D KIM ◽

D KIM

Keyword(s):

Molecular Dynamics ◽

Low Energy ◽

Dynamics Simulation

The neck growth mechanisms in low energy laser sintering of gold nanoparticles: a molecular dynamics simulation study

10.1117/12.706442 ◽

2007 ◽

Author(s):

Heng Pan ◽

Seung Hwan Ko ◽

Costas P. Grigoropoulos

Keyword(s):

Molecular Dynamics ◽

Gold Nanoparticles ◽

Simulation Study ◽

Laser Sintering ◽

Low Energy ◽

Dynamics Simulation ◽

Growth Mechanisms ◽

Energy Laser ◽

Low Energy Laser

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

Journal of Applied Physics ◽

10.1063/1.361289 ◽

1996 ◽

Vol 79 (6) ◽

pp. 2934-2941 ◽

Cited By ~ 27

Author(s):

J. S. Pan ◽

A. T. S. Wee ◽

C. H. A. Huan ◽

H. S. Tan ◽

K. L. Tan

Keyword(s):

Silicon Carbide ◽

Ion Bombardment ◽

Low Energy ◽

Carbide Formation ◽

Argon Ion Bombardment ◽