Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn(1-x)MgxO (x=15%) thin film

2019 ◽  
Author(s):  
Subhananda Chakrabarti ◽  
Md Jawaid Alam ◽  
Punam Murkute ◽  
Sushama Sushama ◽  
Hemant Ghadi
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Defect States ◽  
Uv Ozone

Influence of Thermal Annealing on Structural and Optical Properties of Sb Doped ZnTe Thin Film

2020 ◽  
Vol 12 (1) ◽  
pp. 100-104 ◽  
Author(s):  
Neha Pandey ◽  
Brijesh Kumar ◽  
D. K. Dwivedi
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Heating Temperature ◽  
Annealed Film ◽  
Defect States ◽  
Thermal Evaporation Method ◽  
Different Temperatures ◽  
Film Alloy ◽  
Prepared Alloy

Paper presents the influence of thermal treatment on structural and optical characteristics of Sb0.5ZnTe thin film. Alloy of Sb0.5ZnTe has been prepared through traditional and economical melt quenching technique and thin films of prepared alloy was deposited onto glass substrate by thermal evaporation method at pressure of 10–6 Torr. The antimony doped films were annealed for 2 h at three different temperatures ranges (373 K, 393 K and 413 K). Structural characterization of as prepared and annealed film was done by XRD technique and it was found that annealing improves the film crystal structure. UV-Vis spectrophotometer facilitates optical analysis of Sb0.5ZnTe film in wavelength range of 400–1000 nm. It was observed that band gap Eg of the Sb doped film increased while absorption coefficient (α) decrease with increase in heating temperature. These changes in optical properties were explained in terms of defect states.

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Optical and magneto-optical properties of epitaxial Mn2GaC MAX phase thin film

2021 ◽  
Vol 528 ◽  
pp. 167803
Author(s):  
Sergey Lyaschenko ◽  
Olga Maximova ◽  
Dmitriy Shevtsov ◽  
Sergey Varnakov ◽  
Ivan Tarasov ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Max Phase

Modification of optical properties of magnesium oxide (MgO) thin film under the influence of ambience

2020 ◽  
Author(s):  
Mangalika Sinha ◽  
R. K. Gupta ◽  
P. Dasilva ◽  
P. Mercere ◽  
Mohammed H. Modi
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnesium Oxide

Optical Properties of Organic Thin Film Transistors

2019 ◽  
Vol 75 (3) ◽  
pp. 236-241
Author(s):  
Jun Bin Ko ◽  
Sang Chul Lim ◽  
Seong Hyun Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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