Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs

Author(s):  
Mary H. Crawford ◽  
Andrew A. Allerman ◽  
Arthur J. Fischer ◽  
Katherine H. A. Bogart ◽  
Stephen R. Lee ◽  
...  
2000 ◽  
Vol 622 ◽  
Author(s):  
M. H. Crawford ◽  
J. Han ◽  
R. J. Shul ◽  
M. A. Banas ◽  
J. J. Figiel ◽  
...  

ABSTRACTWe overview several of the challenges in achieving high efficiency nitride-based UV (< 400 nm) LEDs. The issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys ( InGaN, AlInGaN). We compare the performance of two distinct UV LED structures. GaN/AlGaN quantum well LEDs with λ < 360 nm emission have demonstrated output powers > 0.1 mW, but present designs suffer from internal absorption effects. InGaN/AlInGaN quantum well LEDs with 370 nm< λ < 390 nm emission and > 1 mW output power are also presented.


2000 ◽  
Vol 639 ◽  
Author(s):  
A. Kinoshita ◽  
H. Hirayama ◽  
M. Ainoya ◽  
J. S. Kim ◽  
A. Hirata ◽  
...  

ABSTRACTInAlGaN quaternary material is very attractive for realizing ultraviolet (UV) emitting devices working at 300 – 350 nm wavelength range. We demonstrate current injection into 340 nm-band InAlGaN based UV light emitting diodes (LEDs), for the first time, fabricated by metal organic vapor phase epitaxy (MOVPE). We performed current injection into AlGaN/AlGaN multi quantum well (MQW), bulk InAlGaN quaternary and InAlGaN/InAlGaN MQW LEDs through Mg-doped AlGaN/GaN superlattice hole conductive layers. The injected current density was ranging 0 – 0.5 kA/cm2 under pulsed or CW operation. The intensity of both photoluminescence (PL) and electroluminescence for InAlGaN quaternary-based LED was much higher than that for AlGaN based LEDs at room temperature. From these results InAlGaN quaternary-based QWs are expected to realize high intensity UV LEDs and LDs.


2009 ◽  
Vol 311 (7) ◽  
pp. 2080-2083 ◽  
Author(s):  
V.N. Jmerik ◽  
T.V. Shubina ◽  
A.M. Mizerov ◽  
K.G. Belyaev ◽  
A.V. Sakharov ◽  
...  

2016 ◽  
Vol 109 (18) ◽  
pp. 181105 ◽  
Author(s):  
Farsane Tabataba-Vakili ◽  
Thomas Wunderer ◽  
Michael Kneissl ◽  
Zhihong Yang ◽  
Mark Teepe ◽  
...  

1999 ◽  
Vol 09 (PR3) ◽  
pp. Pr3-71-Pr3-76 ◽  
Author(s):  
M. Romero ◽  
V. Fernández ◽  
M. Sánchez

2015 ◽  
Vol 11 (1) ◽  
pp. 2897-2908
Author(s):  
Mohammed S.Aljohani

Tomography is a non-invasive, non-intrusive imaging technique allowing the visualization of phase dynamics in industrial and biological processes. This article reviews progress in Electrical Capacitance Volume Tomography (ECVT). ECVT is a direct 3D visualizing technique, unlike three-dimensional imaging, which is based on stacking 2D images to obtain an interpolated 3D image. ECVT has recently matured for real time, non-invasive 3-D monitoring of processes involving materials with strong contrast in dielectric permittivity. In this article, ECVT sensor design, optimization and performance of various sensors seen in literature are summarized. Qualitative Analysis of ECVT image reconstruction techniques has also been presented.


2019 ◽  
Vol 512 ◽  
pp. 213-218 ◽  
Author(s):  
Wenxian Yang ◽  
Yukun Zhao ◽  
Yuanyuan Wu ◽  
Xuefei Li ◽  
Zhiwei Xing ◽  
...  

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