Design and Performance of Nitride-based UV LEDs
ABSTRACTWe overview several of the challenges in achieving high efficiency nitride-based UV (< 400 nm) LEDs. The issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys ( InGaN, AlInGaN). We compare the performance of two distinct UV LED structures. GaN/AlGaN quantum well LEDs with λ < 360 nm emission have demonstrated output powers > 0.1 mW, but present designs suffer from internal absorption effects. InGaN/AlInGaN quantum well LEDs with 370 nm< λ < 390 nm emission and > 1 mW output power are also presented.
2004 ◽
Vol 272
(1-4)
◽
pp. 449-454
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2008 ◽
Vol 18
(01)
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pp. 179-185
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2004 ◽
Advances in coupled axial turbine and nonaxisymmetric exhaust volute aerodynamics for turbomachinery
2020 ◽
pp. 095441002096645
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