Formation of carbon nanoclusters by implantation of keV carbon ions in fused silica followed by thermal annealing

2005 ◽  
Author(s):  
P. Olivero ◽  
J. L. Peng ◽  
A. Liu ◽  
P. Reichart ◽  
J. C. McCallum ◽  
...  
2007 ◽  
Vol 1035 ◽  
Author(s):  
Zhengda Pan ◽  
S H Morgan ◽  
A Ueda ◽  
R Aga ◽  
A Steigerwald ◽  
...  

AbstractPhotoluminescence (PL) of erbium-doped zinc oxide films with nano-sized grains was studied. The films were grown on silicon (100) and fused silica substrates using e-beam evaporation. The evaporating targets used were sintered pellets of ZnO and Er2O3 mixtures with two different Er concentrations. The films were subsequently annealed at 700 °C in air for an hour. PL was measured at two excitation wavelengths, 325 and 488 nm. The 325 nm is used for exciting the host semiconductor ZnO and 488 nm is used for directly exciting Er3+ ions in the ZnO host. Strong Er3+ luminescence of 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions was observed from annealed film with 4.0 % Er2O3 concentration using either 325 or 488 nm excitation. With 325 nm excitation, the Er3+ luminescence observed is attributed to energy transfer from the excitons in ZnO host to the Er3+ ions doped. The effective energy transfer from ZnO host to the doped Er3+ ions is an essential property for the realization of actual current-injection opto-electronic devices operating at wavelengths of Er3+ emission, for example, at 1.54 μm for the erbium-doped fiber amplifier (EDFA). Our PL results indicate that thermal annealing plays an important role for optically activating the doped Er3+ ions in ZnO nano-crystalline grains of the film.


Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 180
Author(s):  
Federico Sala ◽  
Petra Paié ◽  
Rebeca Martínez Vázquez ◽  
Roberto Osellame ◽  
Francesca Bragheri

Femtosecond laser micromachining (FLM) of fused silica allows for the realization of three-dimensional embedded optical elements and microchannels with micrometric feature size. The performances of these components are strongly affected by the machined surface quality and residual roughness. The polishing of 3D buried structures in glass was demonstrated using different thermal annealing processes, but precise control of the residual roughness obtained with this technique is still missing. In this work, we investigate how the FLM irradiation parameters affect surface roughness and we characterize the improvement of surface quality after thermal annealing. As a result, we achieved a strong roughness reduction, from an average value of 49 nm down to 19 nm. As a proof of concept, we studied the imaging performances of embedded mirrors before and after thermal polishing, showing the capacity to preserve a minimum feature size of the reflected image lower than μ5μm. These results allow for us to push forward the capabilities of this enabling fabrication technology, and they can be used as a starting point to improve the performances of more complex optical elements, such as hollow waveguides or micro-lenses.


2016 ◽  
Vol 611 ◽  
pp. 46-51 ◽  
Author(s):  
S.A. Kazazis ◽  
E. Papadomanolaki ◽  
M. Androulidaki ◽  
K. Tsagaraki ◽  
A. Kostopoulos ◽  
...  

2012 ◽  
Vol 51 (12) ◽  
pp. 121817 ◽  
Author(s):  
Nan Shen ◽  
Philip E. Miller ◽  
Jeff D. Bude ◽  
Ted A. Laurence ◽  
Tayyab I. Suratwala ◽  
...  

1993 ◽  
Vol 316 ◽  
Author(s):  
C.W. White ◽  
J.D. Budai ◽  
S.P. Withrow ◽  
S.J. Pennycook ◽  
D.M. Hembree ◽  
...  

ABSTRACTIon implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) AI2O3. Both types of nanocrystals are three-dimensionally aligned with respect to the AI2O3 matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in AI2O3. Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.


2014 ◽  
Author(s):  
Jun Yang ◽  
Kui Yi ◽  
Minghong Yang ◽  
Guohang Hu ◽  
Jianda Shao

2016 ◽  
Vol 65 (4) ◽  
pp. 044209
Author(s):  
Jiang Yong ◽  
Yuan Xiao-Dong ◽  
Wang Hai-Jun ◽  
Liao Wei ◽  
Liu Chun-Ming ◽  
...  

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