High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers

2005 ◽  
Author(s):  
Taha Masood ◽  
Nuditha V. Amarasinghe ◽  
Scott McWilliams ◽  
Steve Patterson ◽  
David Roh ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Single Mode ◽  
Continuous Wave Operation

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

scholarly journals High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use

2014 ◽  
Vol 19 (10) ◽  
pp. 101502
Author(s):  
Takahiro Fujimoto ◽  
Yusuke Imai ◽  
Kazuyoku Tei ◽  
Shinobu Ito ◽  
Hideko Kanazawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Heat Source ◽  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Temperature Heat

High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot VCSELs

2009 ◽  
Vol 21 (17) ◽  
pp. 1211-1213 ◽  
Author(s):  
D.W. Xu ◽  
S.F. Yoon ◽  
C.Z. Tong ◽  
L.J. Zhao ◽  
Y. Ding ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Continuous Wave ◽  
Single Mode ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Gaas Quantum Dot

High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs

2003 ◽  
Vol 9 (5) ◽  
pp. 1415-1421 ◽  
Author(s):  
Chao-Kun Lin ◽  
D.P. Bour ◽  
Jintian Zhu ◽  
W.H. Perez ◽  
M.H. Leary ◽  
...  
Keyword(s):  
High Temperature ◽  
Continuous Wave ◽  
Air Gap ◽  
Continuous Wave Operation

Continuous-wave operation of ZnMgSSe based blue-green laser diodes under high temperature and high output power

1994 ◽  
Vol 30 (7) ◽  
pp. 568-570 ◽  
Author(s):  
N. Nakayama ◽  
M. Ozawa ◽  
T. Ohata ◽  
A. Ishibashi ◽  
S. Itoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
High Output Power ◽  
Continuous Wave Operation ◽  
High Output

High-Power High-Temperature Continuous-Wave Operation of Quantum Cascade Laser at λ∼4.6 μm without Lateral Regrowth

2012 ◽  
Vol 29 (7) ◽  
pp. 074215 ◽  
Author(s):  
Ping Liang ◽  
Feng-Qi Liu ◽  
Jin-Chuan Zhang ◽  
Li-Jun Wang ◽  
Jun-Qi Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Cascade Laser ◽  
High Power ◽  
Continuous Wave ◽  
Quantum Cascade ◽  
Continuous Wave Operation

scholarly journals Toward continuous-wave operation of organic semiconductor lasers

2017 ◽  
Vol 3 (4) ◽  
pp. e1602570 ◽  
Author(s):  
Atula S. D. Sandanayaka ◽  
Toshinori Matsushima ◽  
Fatima Bencheikh ◽  
Kou Yoshida ◽  
Munetomo Inoue ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Organic Semiconductor ◽  
Continuous Wave ◽  
Continuous Wave Operation

APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS

2002 ◽  
Vol 12 (01) ◽  
pp. 177-205 ◽  
Author(s):  
Nikolai N. Ledentsov ◽  
Victor M. Ustinov ◽  
Dieter Bimberg ◽  
James A. Lott ◽  
Zh. I. Alferov
Keyword(s):  
Quantum Dots ◽  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Single Mode ◽  
Cavity Surface ◽  
Defect Reduction ◽  
Reduction Techniques ◽  
Self Organized ◽  
Vertical Cavity Surface ◽  
Emitting Lasers

Quantum Dots (QD) provide unique opportunities to extend all the basic properties of heterostructure lasers and move further their applications. Practical fabrication of QD lasers became possible when techniques for self-organized growth allowed fabrication of dense and uniform arrays of narrow-gap nanodomains, coherently inserted in a semiconductor crystal matrix. Using of InAs QD lasers enabled significant improvement of device performance and extension of the spectral range on GaAs substrates to mainstream telecom wavelengths. Continuous wave 1.3 μm room-temperature output power of ~300 mW single mode for edge-emitters and of 1.2 mW multimode for vertical-cavity surface-emitting lasers are realized. Long operation lifetimes are manifested. The breakthrough become possible both due to development of self-organized growth and defect-reduction techniques in QD technology.

Sign in / Sign up

Export Citation Format

Share Document