A curled-hinge comb micro-mirror using CMOS-MEMS process

2006 ◽  
Author(s):  
Y. R. Huang ◽  
H. M. Tai ◽  
H. P. Chou
Keyword(s):  
2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Chunhua Cai ◽  
Junyan Tan ◽  
Di Hua ◽  
Ming Qin ◽  
Nianfang Zhu

2018 ◽  
Vol 773 ◽  
pp. 152-156
Author(s):  
Chih Hsiung Shen ◽  
Shu Jung Chen ◽  
Shih Hao Lin

This paper proposes a new vacuum sensor with CMOS Metal-N-Poly thermoelectric materials which works for both thermoelectric sensing and resistive heating. A new method of vacuum measurement with self-heating is proposed based on the dual phases of heating and sensing for the same element which is realized with CMOS thermoelectric sensor. Using the TSMC 0.35 μm CMOS-MEMS process, the proposed thermoelectric sensor is designed and fabricated with standard CMOS materials of the 4th metal and N-polysilicon to form 64 pairs of central-symmetrical thermocouples. There is an air convection-sensing area at the center of membrane and is filled with array of micro-through-holes to enhance the effect of heat convection. When the air molecules move through the array of hole, the heat exchange will take away the heat to cause a temperature drop of sensing area which gives a weak voltage between the cold and hot end of the thermocouples. The heating of thermopile itself is designed at the first phase and sensing the output voltage at the second phase subsequently. According to a careful investigation of the measurement with a wide range of 10m~10k torr, our proposed sensing scheme based on a thermoelectric type sensor is proved for practical vacuum detection and most of all it is proved as a new approach to use a commercial thermopile without heater, which is easier to include than a special custom design.


Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 15 ◽  
Author(s):  
Shu-Jung Chen ◽  
Yung-Chuan Wu

This paper introduces a thermoelectric-type sensor with a built-in heater as an alternative approach to the measurement of vacuum pressure based on frequency modulation. The proposed sensor is fabricated using the TSMC (Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan) 0.35 μm complementary metal-oxide-semiconductor-microelectro-mechanical systems (CMOS–MEMS) process with thermocouples positioned central-symmetrically. The proposed frequency modulation technique involves locking the sensor output signal at a given frequency using a phase-lock-loop (PLL) amplifier to increase the signal-to-noise ratio (SNR) and thereby enhance the sensitivity of vacuum measurements. An improved first harmonic signal detection based on asymmetrical applied heating gives a precise measurement. Following calibration, the output voltage is in good agreement with the calibration values, resulting in an error of 0.25% under pressures between 0.1–10 Torr.


Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 50 ◽  
Author(s):  
Yu-Sian Liu ◽  
Kuei-Ann Wen

This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 μm × 1256 μm.


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