scholarly journals Implementation of a CMOS/MEMS Accelerometer with ASIC Processes

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 50 ◽  
Author(s):  
Yu-Sian Liu ◽  
Kuei-Ann Wen
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Accelerometer ◽  
Cmos Mems ◽  
Application Specific Integrated Circuit ◽  
Micro Electromechanical System ◽  
Application Specific ◽  
Mems Process

This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 μm × 1256 μm.

scholarly journals A Robust Fully-Integrated Digital-Output Inductive CMOS-MEMS Accelerometer with Improved Inductor Quality Factor

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 792
Author(s):  
Chiu ◽  
Liu ◽  
Hong
Keyword(s):  
Quality Factor ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Digital Output ◽  
Detection Scheme ◽  
Mems Accelerometer ◽  
Analog To Digital Conversion ◽  
Cmos Mems ◽  
In Series

This paper presents the design, fabrication, and characterization of an inductive complementary metal oxide semiconductor micro-electromechanical systems (CMOS-MEMS) accelerometer with on-chip digital output based on LC oscillators. While most MEMS accelerometers employ capacitive detection schemes, the proposed inductive detection scheme is less susceptible to the stress-induced structural curling and deformation that are commonly seen in CMOS-MEMS devices. Oscillator-based frequency readout does not need analog to digital conversion and thus can simplify the overall system design. In this paper, a high-Q CMOS inductor was connected in series with the low-Q MEMS sensing inductor to improve its quality factor. Measurement results showed the proposed device had an offset frequency of 85.5 MHz, sensitivity of 41.6 kHz/g, noise floor of 8.2 mg/Hz, bias instability of 0.94 kHz (11 ppm) at an average time of 2.16 s, and nonlinearity of 1.5% full-scale.

scholarly journals Active Thermoelectric Vacuum Sensor Based on Frequency Modulation

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 15 ◽  
Author(s):  
Shu-Jung Chen ◽  
Yung-Chuan Wu
Keyword(s):  
Frequency Modulation ◽  
Signal To Noise Ratio ◽  
Complementary Metal Oxide Semiconductor ◽  
Harmonic Signal ◽  
Phase Lock Loop ◽  
Oxide Semiconductor ◽  
Alternative Approach ◽  
Vacuum Sensor ◽  
Cmos Mems ◽  
Mems Process

This paper introduces a thermoelectric-type sensor with a built-in heater as an alternative approach to the measurement of vacuum pressure based on frequency modulation. The proposed sensor is fabricated using the TSMC (Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan) 0.35 μm complementary metal-oxide-semiconductor-microelectro-mechanical systems (CMOS–MEMS) process with thermocouples positioned central-symmetrically. The proposed frequency modulation technique involves locking the sensor output signal at a given frequency using a phase-lock-loop (PLL) amplifier to increase the signal-to-noise ratio (SNR) and thereby enhance the sensitivity of vacuum measurements. An improved first harmonic signal detection based on asymmetrical applied heating gives a precise measurement. Following calibration, the output voltage is in good agreement with the calibration values, resulting in an error of 0.25% under pressures between 0.1–10 Torr.

A CMOS ANALOG INTEGRATED CIRCUIT FOR PIXEL X-RAY DETECTOR

2011 ◽  
Vol 20 (01) ◽  
pp. 71-87 ◽  
Author(s):  
DAVID FITRIO ◽  
SUHARDI TJOA ◽  
ANAND MOHAN ◽  
RONNY VELJANOVSKI ◽  
ANDREW BERRY ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Future Research ◽  
Pulse Shaper ◽  
X Ray ◽  
Application Specific Integrated Circuit ◽  
A Charge ◽  
Czt Detectors ◽  
Cmos Analog Integrated Circuit ◽  
Application Specific

A front-end read-out application specific integrated circuit (ASIC) for a multichannel pixel X-Ray detector system has been fabricated and tested. The chip provides signal amplification for pixelated compound semiconductors such as Cadmium Telluride ( CdTe ) and Cadmium Zinc Telluride ( CZT ) with either 1 mm or 200 μm pitch. Both the detector (compound semiconductor) and ASIC are combined to target future research applicable to spectroscopic imaging in high intensity X-Ray biomedical detector systems. The ASIC was fabricated in a 0.35 μm process by Austria Microsystems and consists of 32 channels, where each channel contains a charge-sensitive amplifier, a pulse shaper and two further stages of amplification providing an overall gain of 1 mV per kilo electron volt (keV) for photons within the energy range of 30–120 keV. The preamplifier and shaper circuits are designed for both positive and negative charge collection (electrons and holes) produced by the CdTe or CZT detectors. The ASIC's shaper has been designed with a time constant of 100 ns to allow operation at photon rate events above 1 Million photons per pixel per second. The design and characterization of the readout chip will be discussed in this paper presenting results from both the simulated and the fabricated chip.

scholarly journals Multi-Function Microelectromechanical Systems Implementation with an ASIC Compatible CMOS 0.18 μm Process

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 314
Author(s):  
Chih-Hsuan Lin ◽  
Chao-Hung Song ◽  
Kuei-Ann Wen
Keyword(s):  
Integrated Circuit ◽  
Microelectromechanical Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Calibration Method ◽  
Oxide Semiconductor ◽  
Quality Factors ◽  
Driving Current ◽  
Out Of Plane ◽  
Application Specific Integrated Circuit ◽  
Circuit Noise

A multi-function microelectromechanical system (MEMS) with a three-axis magnetometer (MAG) and three-axis accelerometer (ACC) function was implemented with an application-specific integrated circuit (ASIC)-compatible complementary metal-oxide-semiconductor (CMOS) 0.18 μm process. The readout circuit used the nested chopper, correlated double-sampling (CDS), noise reduction method; the frequency division multiplexing method; the time-division multiplexing method; and the calibration method. Sensing was performed by exciting the MEMS three-axis magnetometer at X/Y/Z axes mechanical resonant frequencies of 3.77/7.05/7.47 kHz, respectively. A modest die-level vacuum packaging resulted in in-plane and out-of-plane mechanical quality factors of 471–500 and 971–1000, respectively. The sensitivities of both the three-axis magnetometer with 2 mA driving current and the three-axis accelerometer were 7.1–10.7 uV/uT and 58.37–88.87 uV/ug. The resolutions of both the three-axis magnetometer with 2 mA driving current and three-axis accelerometer resolution were 44.06–87.46 nT/√Hz and 5.043–7.5 ng/√Hz. The resolution was limited by circuit noise equivalent acceleration (CNEM) and Brownian noise equivalent magnetic field (BNEM).

Evaluation and Characterization of Reliable Packaging Method for Neuromotor Prosthetic Device

2013 ◽  
Vol 651 ◽  
pp. 367-371
Author(s):  
Kwan Ling Tan ◽  
Rui Qi Lim ◽  
Tack Boon Yee ◽  
Ming Yua Cheng
Keyword(s):  
Integrated Circuit ◽  
Three Dimensional ◽  
Electroless Nickel ◽  
Bonding Parameters ◽  
Application Specific Integrated Circuit ◽  
Electrical Connections ◽  
Application Specific ◽  
Test Result ◽  
Probe Array

Neural probe array is used for neural recording and simulation applications. It will be implanted into the motor cortex of a paralytic human to control robotic arm and perform tasks such as grasping an object. The major components are silicon (Si) probes, Si platform, application-specific integrated circuit (ASIC), polyimide flexible cable and wireless IC. In-plane Si probes are inserted into the Si platform to form a three-dimensional (3D) probe array. Wirebonding technique is used to integrate the ASIC and the probe array. Pad finishes play an important role in wire bonding as it would affect the reliability of the electrical connections. As such, the focus of the paper will be on the evaluation and characterization of an electroless nickel immersion gold (ENIG) pad finishing and its bonding parameters for wirebonding application. ENIG pad having a 0.1-µm gold (Au) thickness combined with an additional Au stud and wirebonding temperature of 200 °C are found to have comparable wirebonding capabilities as a 0.3-µm thick Au finishing pad. The wire pull test result and SEM observation between the ENIG and Au finishing pad at different bonding parameters were presented and discussed.

scholarly journals Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1272
Author(s):  
Zhihua Fan ◽  
Qinling Deng ◽  
Xiaoyu Ma ◽  
Shaolin Zhou
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Photonic Devices ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nanophotonic Devices ◽  
Optoelectronic Integration ◽  
Hybrid Devices ◽  
Micro Electromechanical System

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

scholarly journals Simultaneous Voltage and Current Measurement Instrumentation Amplifier for ECG and PPG Monitoring

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 679
Author(s):  
Jongpal Kim
Keyword(s):  
Integrated Circuit ◽  
Cardiovascular Health ◽  
Current Noise ◽  
Instrumentation Amplifier ◽  
Current Sensing ◽  
Application Specific Integrated Circuit ◽  
Time Division ◽  
Electrocardiogram Ecg ◽  
First Time ◽  
Application Specific

An instrumentation amplifier (IA) capable of sensing both voltage and current at the same time has been introduced and applied to electrocardiogram (ECG) and photoplethysmogram (PPG) measurements for cardiovascular health monitoring applications. The proposed IA can switch between the voltage and current sensing configurations in a time–division manner faster than the ECG and PPG bandwidths. The application-specific integrated circuit (ASIC) of the proposed circuit design was implemented using 180 nm CMOS fabrication technology. Input-referred voltage noise and current noise were measured as 3.9 µVrms and 172 pArms, respectively, and power consumption was measured as 34.9 µA. In the current sensing configuration, a current noise reduction technique is applied, which was confirmed to be a 25 times improvement over the previous version. Using a single IA, ECG and PPG can be monitored in the form of separated ECG and PPG signals. In addition, for the first time, a merged ECG/PPG signal is acquired, which has features of both ECG and PPG peaks.

CONCEPTS OF ELECTRONICALLY-CONTROLLED ELECTROMECHANICAL/MECHANOELECTRICAL STEER-, AUTODRIVE- AND AUTOABSORBABLE WHEELS FOR ENVIRONMENTALLY-FRIENDLY TRI-MODE SUPERCARS

1994 ◽  
Vol 04 (04) ◽  
pp. 501-516 ◽  
Author(s):  
BOGDAN T. FIJALKOWSKI ◽  
JAN W. KROSNICKI
Keyword(s):  
Direct Current ◽  
Integrated Circuit ◽  
Environmentally Friendly ◽  
Alternating Current ◽  
Switching Frequency ◽  
Neuro Fuzzy ◽  
Interior Permanent Magnet ◽  
Application Specific Integrated Circuit ◽  
Computer Processor ◽  
Application Specific

Concepts of the electronically-controlled electromechanical/mechanoelectrical Steer-, Autodrive- and Autoabsorbable Wheels (SA2W) with their brushless Alternating Current-to-Alternating Current (AC-AC), Alternating Current-to-Direct Current-Alternating Current (AC-DC-AC) and/or Direct Current-to-Alternating Current (DC-AC)/Alternating Current-to-Direct Current (AC-DC) macroelectronic converter commutator (macro-commutator) wheel-hub motors/generators with the Application Specific Integrated Matrixer (ASIM) macroelectronic converter commutators (ASIM macrocommutators) and Application Specific Integrated Circuit (ASIC) microelectronic Neuro-Fuzzy (NF) computer (processor) controllers (ASIC NF microcontrollers) for environmentally-friendly tri-mode supercars (advanced ultralight hybrids) have been conceived by the first author and designed by both authors with the Cracow University of Technology’s Automotive Mechatronics Research and Development (R&D) Team. These electromechanical/mechanoelectrical wheel-hub motors/generators, respectively, for instance, can be composed of the outer rotor with the Interior Permanent Magnet (IPM) poles and the inner stator that has the three-phase armature winding. The macroelectronic converter commutator establishes the AC-AC cycloconverter, AC-DC rectifier-DC-AC inverter and/or DC-AC inverter/AC-DC rectifier ASIM macrocommutator. The microelectronic NF computer (processor) controller establishes the ASIC microcomputer-based NF microcontroller. By adopting continuous semiconductor bipolar electrical valves in the high-power ASIM, it has been able to increase the commutation (switching) frequency and reduce harmonic losses of the electromechanical/mechanoelectrical wheel-hub motors/generators, respectively.

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

scholarly journals Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

2017 ◽  
pp. 11-16
Author(s):  
Widianto Widianto ◽  
Lailis Syafaah ◽  
Nurhadi Nurhadi
Keyword(s):  
Monte Carlo ◽  
Integrated Circuit ◽  
High Speed ◽  
Evaluation Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Process Variations ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spice Simulation ◽  
Simulation Results

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it. 

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