Analysis of thermal stress damage in single-crystal silicon induced by 1064nm long pulse laser

2007 ◽  
Author(s):  
Yanbei Chen ◽  
Jian Lu ◽  
Xiaowu Ni
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Pulse Laser ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Stress Damage ◽  
Long Pulse

scholarly journals Surface exfoliation analysis on single-crystal silicon under compressed plasma flow action

2018 ◽  
Vol 36 (1) ◽  
pp. 129-135
Author(s):  
J. Shen ◽  
I. Shahid ◽  
X. Yu ◽  
J. Zhang ◽  
H.W. Zhong ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Plasma Flow ◽  
Crack Depth ◽  
Single Crystal Silicon ◽  
Fracture Initiation ◽  
Scale Model ◽  
Integral Parameter ◽  
Crystal Silicon ◽  
Specific Material

AbstractSurface exfoliation was observed on single-crystal silicon surface under the action of compressed plasma flow (CPF). This phenomenon is mainly attributed to the strong transient thermal stress impact induced by CPF. To gain a better understanding of the mechanism, a micro scale model combined with thermal conduction and linear elastic fracture mechanics was built to analyze the thermal stress distribution after energy deposition. After computation with finite element method, J integral parameter was applied as the criterion for fracture initiation evaluation. It was demonstrated that the formation of surface exfoliation calls for specific material, crack depth, and CPF parameter. The results are potentially valuable for plasma/matter interaction understanding and CPF parameter optimization.

Numerical study of thermal stress damage in dielectric film by long-pulse laser

2013 ◽  
Author(s):  
Ji-xing Cai ◽  
Guang-yong Jin ◽  
Juan Bi ◽  
Gui-bo Chen ◽  
Ye Zhang
Keyword(s):  
Thermal Stress ◽  
Pulse Laser ◽  
Dielectric Film ◽  
Numerical Study ◽  
Stress Damage ◽  
Long Pulse

Research on Real-Time Stress Damage of Millisecond Laser Irradiation on Single-Crystal Silicon

2016 ◽  
Vol 36 (2) ◽  
pp. 0219002
Author(s):  
李贺 Li He ◽  
蔡继兴 Cai Jixing ◽  
谭勇 Tan Yong ◽  
马遥 Ma Yao ◽  
郭明 Guo Ming ◽  
...  
Keyword(s):  
Single Crystal ◽  
Real Time ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Time Stress ◽  
Stress Damage ◽  
Millisecond Laser

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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