CO2 laser scribe of chemically strengthened glass with high surface compressive stress

2011 ◽  
Author(s):  
Xinghua Li ◽  
Butchi R. Vaddi
Keyword(s):  
Compressive Stress ◽  
Co2 Laser ◽  
High Surface ◽  
Strengthened Glass

Numerical Simulation and Experiment of CO2 Laser Cutting Electronic Strengthened Glass

2012 ◽  
Vol 49 (9) ◽  
pp. 091402
Author(s):  
王星罡 Wang Xinggang ◽  
周明 Zhou Ming ◽  
狄建科 Di Jianke ◽  
赵裕兴 Zhao Yuxing
Keyword(s):  
Numerical Simulation ◽  
Co2 Laser ◽  
Laser Cutting ◽  
Strengthened Glass ◽  
Simulation And Experiment

scholarly journals Study on Thermal Stress Cleavage of Chemically Strengthened Glass by CO2 Laser Beam

Procedia CIRP ◽  
2016 ◽  
Vol 42 ◽  
pp. 460-463 ◽  
Author(s):  
Hisashi Ogi ◽  
Tatsuaki Furumoto ◽  
Tomohiro Koyano ◽  
Akira Hosokawa
Keyword(s):  
Thermal Stress ◽  
Laser Beam ◽  
Co2 Laser ◽  
Strengthened Glass

Characterization of Laser Cleavage of the Chemically Strengthened Glass Rely on the Variation of Compressive Stress

2016 ◽  
Vol 2016.11 (0) ◽  
pp. B27
Author(s):  
Hisashi OGI ◽  
Tatsuaki FURUMOTO ◽  
Yohei HASHIMOTO ◽  
Tomohiro KOYANO ◽  
Akira HOSOKAWA
Keyword(s):  
Compressive Stress ◽  
Strengthened Glass

CO2 laser cleavage of chemically strengthened glass

2021 ◽  
Vol 289 ◽  
pp. 116961
Author(s):  
Tatsuaki Furumoto ◽  
Yohei Hashimoto ◽  
Hisashi Ogi ◽  
Tomoya Kawabe ◽  
Mitsugu Yamaguchi ◽  
...  
Keyword(s):  
Co2 Laser ◽  
Strengthened Glass

Compressive stress profiles of chemically strengthened glass after exposure to high voltage electric fields

2014 ◽  
Vol 394-395 ◽  
pp. 6-8 ◽  
Author(s):  
Lynn M. Thirion ◽  
Elena Streltsova ◽  
Wen-Ya Lee ◽  
Zhenan Bao ◽  
Mingqian He ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Electric Fields ◽  
High Voltage ◽  
Strengthened Glass ◽  
Stress Profiles

CO2 laser-induced weakening in chemically strengthened glass: Improvement in processability and its visualization by Raman mapping

2018 ◽  
Vol 44 (3) ◽  
pp. 2843-2846 ◽  
Author(s):  
Nobuaki Terakado ◽  
Shohei Uchida ◽  
Ryusei Sasaki ◽  
Yoshihiro Takahashi ◽  
Takumi Fujiwara
Keyword(s):  
Co2 Laser ◽  
Raman Mapping ◽  
Strengthened Glass

scholarly journals Pressure-Induced Changes in Interdiffusivity and Compressive Stress in Chemically Strengthened Glass

2014 ◽  
Vol 6 (13) ◽  
pp. 10436-10444 ◽  
Author(s):  
Mouritz N. Svenson ◽  
Lynn M. Thirion ◽  
Randall E. Youngman ◽  
John C. Mauro ◽  
Sylwester J. Rzoska ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Strengthened Glass ◽  
Induced Changes

Localization of Adenosine Triphosphatase Activity in the Phleom of Nicotiana Tabacum

1972 ◽  
Vol 30 ◽  
pp. 230-231
Author(s):  
James Cronshaw ◽  
Jamison E. Gilder
Keyword(s):  
Plasma Membrane ◽  
Atpase Activity ◽  
Adenosine Triphosphatase ◽  
Higher Plants ◽  
High Surface ◽  
Root Tip ◽  
Animal Cells ◽  
Physiological Processes ◽  
Tip Cells ◽  
Atpase Localization

Adenosine triphosphatase (ATPase) activity has been shown to be associated with numerous physiological processes in both plants and animal cells. Biochemical studies have shown that in higher plants ATPase activity is high in cell wall preparations and is associated with the plasma membrane, nuclei, mitochondria, chloroplasts and lysosomes. However, there have been only a few ATPase localization studies of higher plants at the electron microscope level. Poux (1967) demonstrated ATPase activity associated with most cellular organelles in the protoderm cells of Cucumis roots. Hall (1971) has demonstrated ATPase activity in root tip cells of Zea mays. There was high surface activity largely associated with the plasma membrane and plasmodesmata. ATPase activity was also demonstrated in mitochondria, dictyosomes, endoplasmic reticulum and plastids.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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