Design, fabrication, and characterization of quantum well infrared photoconductor in long-wavelength infrared

2011 ◽  
Author(s):  
Ju-peng Jin ◽  
Jian-xin Chen ◽  
Chun Lin
Keyword(s):  
Quantum Well ◽  
Long Wavelength ◽  
Fabrication And Characterization ◽  
Long Wavelength Infrared

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

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