50X, 75X mask cleaning effects on EUV lithography process and lifetime: lines and spaces, contacts, and LER

2012 ◽  
Author(s):  
Brittany M. McClinton ◽  
Robert J. Chen ◽  
Simi A. George ◽  
Yongbae Kim ◽  
Lorie-Mae Baclea-an ◽  
...  
2011 ◽  
Author(s):  
Simi A. George ◽  
Robert J. Chen ◽  
Lorie-Mae Baclea-an ◽  
Patrick P. Naulleau

2018 ◽  
Vol 282 ◽  
pp. 59-63
Author(s):  
Hyun Tae Kim ◽  
Nagendra Prasad Yerriboina ◽  
Hee Jin Song ◽  
Jin Goo Park

For EUV lithography, a reflective mask is essential because of use of the strong energy, wavelength of 13.5 nm. The EUV mask consists of multi-layered, multi-material structure and is susceptible to various contaminants. Since EUV lithography process should be used in a high vacuum environment, an electrostatic chuck (ESC) is used to fix or hold the EUV mask using electrostatic force. In general, in order to use ESC chuck, it needs a thin conductive layer (CrN layer) on the backside. However, the contact points of the electrostatic pin chuck can make exfoliation of conductive CrN layer producing CrN particles. If these particles are present on the backside of the mask, CD or DOF may be affected during EUV exposure. The 1 μm particle can leads to a gap radius of 42mm [4]. Moreover, these backside particles may travel to the front side. Therefore, backside cleaning should be performed to remove particles from the mask backside surface.


Author(s):  
Elizabeth Buitrago ◽  
Tero S. Kulmala ◽  
Roberto Fallica ◽  
Yasin Ekinci

Author(s):  
Yuya Kamei ◽  
Shinichiro Kawakami ◽  
Masahide Tadokoro ◽  
Yusaku Hashimoto ◽  
Takeshi Shimoaoki ◽  
...  

Author(s):  
Yuya Kamei ◽  
Takahiro Shiozawa ◽  
Shinichiro Kawakami ◽  
Hiroshi Ichinomiya ◽  
Masashi Enomoto ◽  
...  

2017 ◽  
Author(s):  
Yuya Kamei ◽  
Takahiro Shiozawa ◽  
Shinichiro Kawakami ◽  
Hideo Shite ◽  
Hiroshi Ichinomiya ◽  
...  

2021 ◽  
Vol 10 ◽  
pp. 100082
Author(s):  
Murat Pak ◽  
Wesley Zanders ◽  
Patrick Wong ◽  
Sandip Halder

2012 ◽  
Vol 187 ◽  
pp. 279-282
Author(s):  
Annie Y. Xia

Mask cleaning remains as one of the major challenges in EUV lithography. Without the use of traditional pellicles, EUV masks demand high purity and effective but mild cleaning techniques for protection from defects. Recently, trends towards dilute chemistries and progress in megasonic cleaning have brought renewed interest in gasified DI water. In this paper, we describe the design and development of a point-of-use functional water treatment system, specifically for advanced mask cleaning applications. The system comprises two modules the purification module and the gasification module. The purification module provides treatment features including TOC reduction, sub-micron particle retention, and degassing, as well as thermal and pressure control. The gasification module employs micro-porous PFA membrane contacting technology to deliver ultra clean bubble-free DI water with various gases (O3, N2, H2, CO2, NH3, etc.) over a wide concentration range. The treatment system is also equipped with closed loop process control to maintain and regulate process temperature, pressure and dissolved gas concentration. This active control feature allows precise control and minimal process variations.


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