Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition

The present work investigates a thick amorphous multi-layer carbon coating fabricated by a plane hollow cathode plasma-enhanced chemical vapor deposition technique.

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Hollow cathode plasma assisted chemical vapor deposition of diamond

Applied Physics Letters ◽

10.1063/1.99049 ◽

1988 ◽

Vol 52 (20) ◽

pp. 1658-1660 ◽

Cited By ~ 48

Author(s):

B. Singh ◽

O. R. Mesker ◽

A. W. Levine ◽

Y. Arie

Keyword(s):

Chemical Vapor Deposition ◽

Hollow Cathode ◽

Vapor Deposition ◽

Chemical Vapor ◽

Cathode Plasma

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Diamond Growth by Dual Hollow Cathode Arc Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l1406 ◽

1997 ◽

Vol 36 (Part 2, No. 10B) ◽

pp. L1406-L1409 ◽

Cited By ~ 1

Author(s):

Gou-Tsau Liang ◽

Franklin Chau-Nan Hong

Keyword(s):

Chemical Vapor Deposition ◽

Hollow Cathode ◽

Vapor Deposition ◽

Chemical Vapor ◽

Diamond Growth ◽

Cathode Arc

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Metastable nanosized diamond formation from a C-H-O fluid system

Journal of Materials Research ◽

10.1557/jmr.2010.0303 ◽

2010 ◽

Vol 25 (12) ◽

pp. 2336-2340 ◽

Cited By ~ 13

Author(s):

S.K. Simakov

Keyword(s):

Experimental Data ◽

Chemical Vapor Deposition ◽

Synthesis Gas ◽

Vapor Deposition ◽

Present Model ◽

Chemical Vapor ◽

Cvd Diamond ◽

Diamond Synthesis ◽

Diamond Formation ◽

Fluid System

The model of nanosized diamond particles formation at metastable P-T parameters from a C-H-O fluid system is presented. It explains the hydrothermal formation and growth of diamond and the specifics of chemical vapor deposition (CVD) diamond synthesis gas mixtures at low P-T parameters. Further, the model explains the genesis of interstellar nanodiamond formations in space and the genesis of metamorphic microdiamonds in shallow depth Earth rocks. In contrast to models where many possible reactions are considered, the present model makes the simplest possible assumptions about the key processes, and is then able to account for various tendencies seen in experimental data.

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Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

Carbon ◽

10.1016/j.carbon.2012.08.041 ◽

2013 ◽

Vol 51 ◽

pp. 437 ◽

Cited By ~ 1

Author(s):

Hong-wei Jiang ◽

Hai-liang Huang ◽

Xiang-hua Jia ◽

Long-cheng Yin ◽

Yu-qiang Chen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Direct Current ◽

Diamond Film ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Cathode Plasma ◽

Plasma Chemical Vapor Deposition

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Diamond growth by hollow cathode arc plasma chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1998.0424 ◽

1998 ◽

Vol 13 (11) ◽

pp. 3114-3121 ◽

Cited By ~ 11

Author(s):

Gou-Tsau Liang ◽

Franklin Chau-Nan Hong

Keyword(s):

Chemical Vapor Deposition ◽

Substrate Temperature ◽

Hollow Cathode ◽

Vapor Deposition ◽

Diamond Films ◽

Chemical Vapor ◽

Arc Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Cathode Arc

Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4.

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