scholarly journals Metaform optics: Bridging nanophotonics and freeform optics

2021 ◽  
Vol 7 (18) ◽  
pp. eabe5112
Author(s):  
Daniel K. Nikolov ◽  
Aaron Bauer ◽  
Fei Cheng ◽  
Hitoshi Kato ◽  
A. Nick Vamivakas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Degrees Of Freedom ◽  
Optical Component ◽  
Optical Systems ◽  
Optical Surface ◽  
Lithography Process ◽  
Mobile Cameras ◽  
Freeform Optics ◽  
New Generation

The demand for high-resolution optical systems with a compact form factor, such as augmented reality displays, sensors, and mobile cameras, requires creating new optical component architectures. Advances in the design and fabrication of freeform optics and metasurfaces make them potential solutions to address the previous needs. Here, we introduce the concept of a metaform—an optical surface that integrates the combined benefits of a freeform optic and a metasurface into a single optical component. We experimentally realized a miniature imager using a metaform mirror. The mirror is fabricated via an enhanced electron beam lithography process on a freeform substrate. The design degrees of freedom enabled by a metaform will support a new generation of optical systems.

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

Fabrication of X-Ray Masks Using the Silicon Direct Write Electron-Beam Lithography Process and Complementary Electron-Sensitive Resists

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4122-4126
Author(s):  
Eric Lavallée ◽  
Jacques Beauvais ◽  
Dominique Drouin ◽  
Mélanie Cloutier ◽  
Pan Yang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
X Ray ◽  
Lithography Process

Optical Properties of InGaAs/InP Quantum Wires Defined by High Voltage Electron Beam Lithography at 200 kV

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Ils ◽  
M. Michel ◽  
A. Forchel ◽  
I. Gyuro ◽  
P. Speier ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Quantum Wires ◽  
Optical Emission ◽  
Blue Shift ◽  
Ingaas Layer ◽  
Lithography Process ◽  
Voltage Electron ◽  
Side Walls ◽  
Wet Chemical

ABSTRACTWe have fabricated and analyzed high quality InGaAs/InP quantum wires by electron beam lithography and wet chemical etching. In order to optimize the shape of the wet-etched wires different wire orientations were investigated. As results of the lithography process we obtain wire masks with widths down to 15 nm and etched wires with widths of the InGaAs layer of 18 nm.The wires were studied optically by means of photoluminescence spectroscopy. In contrast to dry etched wire structures the wet chemically etched wires show strong optical emission even for geometrical widths less than 25 nm. The weak decrease of the quantum efficiency with decreasing wire width indicates that there are no dead layers at the side walls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the InGaAs/InP wires is independent of the wire dimension down to widths of 50 nm. This indicates that a steep lateral potential in our structures is obtained due to the confinement by the semiconductor/vacuum transition at the etched surfaces. For wires with smaller widths an increasing blue shift of photoluminescence energy up to more than 30 meV is observed.

Application of a New Empirical Model to the Electron Beam Lithography Process with Chemically Amplified Resists

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6761-6766 ◽  
Author(s):  
Young-Mog Ham ◽  
Ki-Ho Baik ◽  
Won-Gyu Lee ◽  
Tack Dong Chung ◽  
Kukjin Chun
Keyword(s):  
Electron Beam ◽  
Empirical Model ◽  
Electron Beam Lithography ◽  
Lithography Process ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

scholarly journals Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process

1997 ◽  
Vol 70 (22) ◽  
pp. 3020-3022 ◽  
Author(s):  
D. Drouin ◽  
J. Beauvais ◽  
R. Lemire ◽  
E. Lavallée ◽  
R. Gauvin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 16755-16763 ◽  
Author(s):  
Kaixi Bi ◽  
Quan Xiang ◽  
Yiqin Chen ◽  
Huimin Shi ◽  
Zhiqin Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Metal Deposition ◽  
Lithography Process ◽  
Direct Patterning ◽  
Copper Naphthenate ◽  
Device Applications ◽  
Lift Off ◽  
Copper Composite

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes.

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