Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 16755-16763 ◽  
Author(s):  
Kaixi Bi ◽  
Quan Xiang ◽  
Yiqin Chen ◽  
Huimin Shi ◽  
Zhiqin Li ◽  
...  

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes.


1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine


Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11306-11316
Author(s):  
Christian D. Dieleman ◽  
Weiyi Ding ◽  
Lianjia Wu ◽  
Neha Thakur ◽  
Ivan Bespalov ◽  
...  

A general, one-step patterning technique for colloidal quantum dots by direct optical or e-beam lithography. Photons (5.5–91.9 eV) and electrons (3 eV–50 kV) crosslink and immobilize QDs down to tens of nm while preserving the luminescent properties.



2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4122-4126
Author(s):  
Eric Lavallée ◽  
Jacques Beauvais ◽  
Dominique Drouin ◽  
Mélanie Cloutier ◽  
Pan Yang ◽  
...  


1992 ◽  
Vol 283 ◽  
Author(s):  
P. Ils ◽  
M. Michel ◽  
A. Forchel ◽  
I. Gyuro ◽  
P. Speier ◽  
...  

ABSTRACTWe have fabricated and analyzed high quality InGaAs/InP quantum wires by electron beam lithography and wet chemical etching. In order to optimize the shape of the wet-etched wires different wire orientations were investigated. As results of the lithography process we obtain wire masks with widths down to 15 nm and etched wires with widths of the InGaAs layer of 18 nm.The wires were studied optically by means of photoluminescence spectroscopy. In contrast to dry etched wire structures the wet chemically etched wires show strong optical emission even for geometrical widths less than 25 nm. The weak decrease of the quantum efficiency with decreasing wire width indicates that there are no dead layers at the side walls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the InGaAs/InP wires is independent of the wire dimension down to widths of 50 nm. This indicates that a steep lateral potential in our structures is obtained due to the confinement by the semiconductor/vacuum transition at the etched surfaces. For wires with smaller widths an increasing blue shift of photoluminescence energy up to more than 30 meV is observed.



1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6761-6766 ◽  
Author(s):  
Young-Mog Ham ◽  
Ki-Ho Baik ◽  
Won-Gyu Lee ◽  
Tack Dong Chung ◽  
Kukjin Chun


Sign in / Sign up

Export Citation Format

Share Document