Thin Film FETs: Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications (Adv. Funct. Mater. 16/2019)

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

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Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

Applied Physics Letters ◽

10.1063/1.4871471 ◽

2014 ◽

Vol 104 (14) ◽

pp. 142103 ◽

Cited By ~ 2

Author(s):

Chalao Wongsaeng ◽

Pisith Singjai

Keyword(s):

Carbon Nanotube ◽

Gold Nanoparticle ◽

Field Effect ◽

Field Effect Transistors ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Carbon Nanotube Network

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(Invited) Alteration of the Electrical Transport in Carbon Nanotube Network Field-Effect Transistors Using Polymer Encapsulants and Gate Dielectrics

ECS Meeting Abstracts ◽

10.1149/ma2020-018758mtgabs ◽

2020 ◽

Vol MA2020-01 (8) ◽

pp. 758-758

Author(s):

François Lapointe

Keyword(s):

Carbon Nanotube ◽

Electrical Transport ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Carbon Nanotube Network

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Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.181-182.343 ◽

2011 ◽

Vol 181-182 ◽

pp. 343-348

Author(s):

K.C. Narasimhamurthy ◽

Roy Paily Palathinkal

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Hafnium Oxide ◽

Field Effect ◽

Dielectric Material ◽

Field Effect Transistors ◽

Gate Oxide ◽

Channel Length ◽

Performance Comparison ◽

Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

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