Influence of composition of Hg1−x Cd x Te (x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation

2019 ◽  
Vol 6 (7) ◽  
pp. 075912
Author(s):  
A V Voitsekhovskii ◽  
D V Grigoryev ◽  
A G Korotaev ◽  
A P Kokhanenko ◽  
K A Lozovoy ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Epitaxial Film ◽  
Radiation Defects ◽  
Active Radiation ◽  
Boron Implantation

The neutron irradiation effects on the temperature dependencies of the electrical conductivity of nanosilicon particles

2017 ◽  
Vol 31 (28) ◽  
pp. 1750257 ◽  
Author(s):  
Elchin Huseynov ◽  
Aydan Garibli
Keyword(s):  
Electrical Conductivity ◽  
Neutron Flux ◽  
Neutron Irradiation ◽  
Silicon Nanoparticles ◽  
Activation Energies ◽  
Radiation Defects ◽  
Irradiation Effects ◽  
Active Radiation ◽  
Before And After ◽  
Effects Of Temperature

The effects of temperature and neutron irradiation on the silicon nanoparticles have been studied at different frequencies. It has been defined that additional electro-active radiation defects occur in the silicon nanomaterial after neutron irradiation. Therefore, the change of neutron flux at the interval of [Formula: see text]–[Formula: see text] increases the conductivity of nanosilicon. Activation energies of the silicon nanoparticles were calculated for 10 different constant frequencies according to Arrhenius approach before and after neutron irradiation. The mechanism of electrical conductivity which explains results has been established.

scholarly journals Spatial Distribution of Diffuse Attenuation of Photosynthetic Active Radiation and Its Main Regulating Factors in Inland Waters of Northeast China

2016 ◽  
Vol 8 (11) ◽  
pp. 964 ◽  
Author(s):  
Jianhang Ma ◽  
Kaishan Song ◽  
Zhidan Wen ◽  
Ying Zhao ◽  
Yingxin Shang ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Northeast China ◽  
Photosynthetic Active Radiation ◽  
Inland Waters ◽  
Active Radiation

Penetration of Photosynthetically Active Radiation Into Tobacco Crops

1980 ◽  
Vol 7 (4) ◽  
pp. 449 ◽  
Author(s):  
DM Whitfield ◽  
DJ Connor
Keyword(s):  
Mathematical Model ◽  
Spatial Distribution ◽  
Photosynthetically Active Radiation ◽  
Time Of Day ◽  
Frequency Distributions ◽  
Active Radiation ◽  
Crop Size ◽  
Leaf Surfaces ◽  
Physical Representation ◽  
Beam Component

The spatial distribution of photosynthetically active radiation (PAR) was measured on several occasions during the growth of a tobacco crop. The data describe the penetration of PAR into the crop. Penetration was influenced by crop size, row structure, time of day and conditions of incident irradiance. At solar elevations greater than 15° on clear days, there were few regions in the crop with flux densities between 0.1I0 and 0.9I0, where I0 is the flux density of PAR above the canopy. Frequency distributions of flux densities were therefore bimodal. At lower elevations, the direct- beam component was attentuated and frequency distributions were unimodal with few flux densities above 0.6I0. Under diffuse irradiance, the bimodal response was attentuated to give a relatively uniform distribution of flux densities on the transects. These data were used to appraise two estimates of the penetration of PAR into the canopy. The first was based on a physical representation of the display of leaf surfaces in the canopy. Alternative estimates were derived from a mathematical model of the display of foliage of single plants which was extended here to account for the effect of neighbouring plants on the penetration of PAR into the crop.

Spatial distribution of radiation defects in tooth enamel

1999 ◽  
Vol 41 (7) ◽  
pp. 1100-1101 ◽  
Author(s):  
S. S. Ishchenko ◽  
S. M. Okulov ◽  
I. P. Vorona
Keyword(s):  
Spatial Distribution ◽  
Tooth Enamel ◽  
Radiation Defects

The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

2006 ◽  
Vol 49 (9) ◽  
pp. 929-933 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
A. G. Korotaev ◽  
A. P. Kokhanenko ◽  
D. V. Grigor’ev ◽  
V. S. Varavin ◽  
...  
Keyword(s):  
Band Gap ◽  
Radiation Defects ◽  
Active Radiation ◽  
Graded Band Gap

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

SEM evaluation of the TEM cold-stage double-film specimen

1984 ◽  
Vol 42 ◽  
pp. 272-273
Author(s):  
Jayesh Bellare
Keyword(s):  
Spatial Distribution ◽  
Sample Preparation ◽  
Sample Thickness ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Liquid Sample ◽  
Thin Specimen ◽  
Sample Preparation Technique ◽  
Cold Stage ◽  
Film Specimen

Seeing is believing, but only after the sample preparation technique has received a systematic study and a full record is made of the treatment the sample gets.For microstructured liquids and suspensions, fast-freeze thermal fixation and cold-stage microscopy is perhaps the least artifact-laden technique. In the double-film specimen preparation technique, a layer of liquid sample is trapped between 100- and 400-mesh polymer (polyimide, PI) coated grids. Blotting against filter paper drains excess liquid and provides a thin specimen, which is fast-frozen by plunging into liquid nitrogen. This frozen sandwich (Fig. 1) is mounted in a cooling holder and viewed in TEM.Though extremely promising for visualization of liquid microstructures, this double-film technique suffers from a) ireproducibility and nonuniformity of sample thickness, b) low yield of imageable grid squares and c) nonuniform spatial distribution of particulates, which results in fewer being imaged.

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