Thermodynamic Analysis of the Interaction of Components in the Si–C–O System in the Carbothermic Synthesis of Silicon Carbide

2019 ◽  
Vol 484 (2) ◽  
pp. 41-43 ◽  
Author(s):  
A. S. Lebedev ◽  
V. E. Eremyashev ◽  
E. A. Trofimov ◽  
V. N. Anfilogov
Keyword(s):  
Silicon Carbide ◽  
Thermodynamic Analysis ◽  
Interaction Of Components ◽  
Carbothermic Synthesis

scholarly journals Thermodynamic analysis of the interaction of components in the Si–C–O system in the carbothermic synthesis of silicon carbide

2019 ◽  
Vol 484 (5) ◽  
pp. 559-562
Author(s):  
A. S. Lebedev ◽  
V. E. Eremyashev ◽  
E. A. Trofimov ◽  
V. N. Anfilogov
Keyword(s):  
Silicon Carbide ◽  
Phase Equilibria ◽  
Gas Phase ◽  
Silicon Oxide ◽  
Synthesis Temperature ◽  
Protective Atmosphere ◽  
Optimal Conditions ◽  
Oxide Melt ◽  
Interaction Of Components ◽  
Carbothermic Synthesis

Phase equilibria in the Si–C–O system at temperatures of 1400–1700°C were modeled to theoretically determine the optimal conditions for implementing our proposed method of carbothermic synthesis of silicon carbide in reactors with an autonomous protective atmosphere. It was found that, depending on the ratio between the initial components and the synthesis temperature, the equilibrium products of the synthesis can be various combinations of silicon carbide, a gas phase, residual amounts of silicon oxide and carbon, andan oxide melt formed at high temperatures.

Combustion co-synthesis of Si3N4-based in situ composites

1996 ◽  
Vol 11 (12) ◽  
pp. 2968-2970 ◽  
Author(s):  
J. T. Li ◽  
W. S. Liu ◽  
Y. L. Xia ◽  
C. C. Ge
Keyword(s):  
Solid Solution ◽  
Silicon Carbide ◽  
Silicon Nitride ◽  
Thermodynamic Analysis ◽  
Experimental Results ◽  
Titanium Carbonitride ◽  
In Situ Composites

The feasibility of synthesizing silicon nitride-silicon carbide-titanium carbonitride composites by combustion reactions is demonstrated. With titanium carbonitride taken to be an ideal solid solution, its composition is determined as TiC0.36N0.64. Thermodynamic analysis supports the experimental results.

Thermodynamic Analysis as a Method of Picking Modifiers in Silicon Carbide Ceramic Technology

2017 ◽  
Author(s):  
N. A. Makarov ◽  
D. Yu. Zhukov ◽  
M. A. Vartanyan ◽  
D. O. Lemeshev ◽  
E. E. Nazarov
Keyword(s):  
Silicon Carbide ◽  
Thermodynamic Analysis ◽  
Ceramic Technology ◽  
Silicon Carbide Ceramic

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

2014 ◽  
Vol 778-780 ◽  
pp. 13-16 ◽  
Author(s):  
Nikolaos Tsavdaris ◽  
Kanaparin Ariyawong ◽  
Odette Chaix-Pluchery ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Thermodynamic Analysis ◽  
Bulk Crystal ◽  
Nucleation Theory ◽  
Growth Time ◽  
Crystal Shape ◽  
Bulk Crystal Growth ◽  
Sublimation Method ◽  
Thin Lamella

We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theory is used towards the understanding of the experimental results. Whether it is a thin lamella or an inclusion, it is found that the polytype transitions systematically occur on the (0001) facet. This suggests that the polytype switch takes place through classical 2D nucleation at the facet. We will show that two criteria must be fulfilled for the occurrence of a foreign polytype: i) minimization of nucleation energy and ii) presence of a facet. This is directly depending on the crystal shape (convex or concave) and its evolution with growth time.

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