Measuring the surface purity of substrates by the tribometry method

2014 ◽  
Vol 57 (5) ◽  
pp. 640-645 ◽  
Author(s):  
V. A. Kolpakov ◽  
N. A. Ivliev
Keyword(s):  

This work is a continuation of a series of works on the study of regularities and structural mechanisms of changes in characteristics of crystallographic texture during cold deformation of plates made of Zr2.5%Nb alloy. Effects of influence of surface cleanliness of the plates on the textural regularities during their rolling were investigated. For this, longitudinal fragments of the tube Æ15.0´1.5 mm² were used, flattened, annealed at 580°C in a vacuum of 1.5...3.0 Pa and rolled along the axis of the original tube with various degrees deformation up to 56%, which is likened to longitudinal rolling of plates. Techniques of maximally uniform straightening of tube fragments were used. An analysis of the results of studies of textural changes during cross rolling of plates, straightened from rings of the same tube and pretreated under similar conditions, is also carried out. To analyze the results, the method of inverse pole figures was used, which, in these studies, is distinguished by the possibility of achieving satisfactory accuracy in calculating the integral characteristics of texture. On this basis, the Kearns textural coefficient was calculated along the normal to the plates’ plane. Corrections were introduced for texture dissimilarity along the thickness of the plates, which is caused by the unbending of the preliminary blanks. Additionally, the analysis of texture distributions was carried out using original techniques. According to the results obtained – as a result of X-ray measuring from the plates’ surface – oscillations of the course of changes in the texture coefficient were revealed. This is associated with an alternating process of relaxation of residual stresses during deformation. It has been established that this effect is initiated from the near-surface regions, is associated with a near-surface impurity, and in some cases can penetrate to a considerable depth of the plates. The twinning nature of such regularities is confirmed and active systems of twins are noted.


2005 ◽  
Vol 75 (5) ◽  
pp. 437-441 ◽  
Author(s):  
Jo Verschuren ◽  
Peter Van Herzele ◽  
Karen De Clerck ◽  
Paul Kiekens

2007 ◽  
Vol 45 (2) ◽  
pp. 165-178 ◽  
Author(s):  
K. V. Baiju ◽  
S. Shukla ◽  
K. S. Sandhya ◽  
J. James ◽  
K. G. K. Warrier

Author(s):  
И.Е. Тысченко ◽  
Э.Д. Жанаев ◽  
В.П. Попов

AbstractThe hydrophilicity of surfaces and the bonding energy of silicon and sapphire wafers at the temperature of joining 50°C are studied. It is established that heating of the Si and Al_2O_3 wafers to 50°C is accompanied by an increase in the degree of hydrophilicity of the wafer surfaces. The effect is attributed to improvement in the surface purity due to the desorption of impurity atoms into vacuum and to an increase in the density of dangling bonds. It is found that the bonding energy of silicon and sapphire wafers joined at a temperature of 50°C and upon further heating in the range 100–250°C is higher compared to the bonding energy of wafers joined at room temperature. The activation energy of the growth of the bonding energy is determined. It is found that this activation energy is 0.57 eV.


Author(s):  
С.А. Кукушкин ◽  
И.П. Калинкин ◽  
А.В. Осипов

AbstractThe fundamentals of a new technique for the cleaning and passivation of (111), (110), and (100) silicon wafer surfaces by hydride groups, which ensure a high surface purity and smoothness at the nanoscale upon long-term storage of the wafers at room temperature in air, are discussed. A new composition of the passivation solution for the long-term antioxidation protection of silicon surfaces is developed. The proposed solution is suitable for the long-term storage and repeated passivation of silicon wafers. The composition of the passivation solution and the conditions of passivation of the silicon wafers in it are described. Silicon wafers treated using the proposed technique can be used for growing epitaxial semiconductor films and different nanostructures. It is shown that only silicon surfaces prepared in this way allow SiC epitaxial films on silicon to be grown by atom substitution. The experimental dependences of the SiC and GaN film structures grown on silicon on the silicon-surface etching conditions are presented. The developed technique for silicon cleaning and passivation can both be used under laboratory conditions and easily adapted for the industrial production of silicon wafers with an oxidation-resistant surface coating.


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