Singularities of the dielectric function of InN in the region of a direct optical transition

JETP Letters ◽  
2009 ◽  
Vol 89 (5) ◽  
pp. 233-237
Author(s):  
L. A. Falkovsky
2013 ◽  
Vol 740-742 ◽  
pp. 1014-1017
Author(s):  
Evgenia V. Kalinina ◽  
O. Konstantinov ◽  
A.A. Lebedev ◽  
Yu. Gol’dberg

Carcinogenic (bactericidal) radiation (λ = 200–300 nm with a peak at 254 nm) is present in natural (Sun) and artificial (lamps) source of UV radiation. Its intensity is very low as compared to other types of radiation, but it strongly affects the health of human beings. To prevent oncological diseases, it is important to monitor the carcinogenic radiation level; i.e., selective photodetectors are required. A UV photodetectors based on n-4H-SiC Schottly barriers and p+-n junctions are proposed. The quantum efficiency spectrum of such detectors is very close to the spectrum of relative action of carcinogenic radiation on human beings due to the direct optical transition at 4.9 eV in 4H-SiC. The quantum efficiency (at the spectral peak 254 nm) amounts to about 0.3 electrons/photon for virtually zero sensitivity in other spectral regions. Quantum efficiency in the wavelength range 247–254 nm is practically independent of temperature in the range from −100 to +300°C.


1992 ◽  
Vol 283 ◽  
Author(s):  
Yasuaki Masumoto

ABSTRACTLasing of nanocrystalline CuCl embedded in a NaCl single crystal wasobserved for the first time. Lasing takes place at 77 K in nanocrystalline CuCl sandwiched between dielectric mirrors under the pulsed ultraviolet laser excitation. The lasing transition is that from bi-exciton to exciton. The lasing is observed up to 108 K. The optical gain of nanocrystalline CuCl is almost the same as that of bulk crystals in spite of the low concentration of CuCl in the NaCl matrix.The origin of visible photoluminescence of nanocrystalline Ge in SiO2 glassy matrix has been studied. Spectroscopic analyses of nanocrystalline Ge indicate that the room-temperature photoluminescence comes from nanocrystalline Ge of diameter of 4 nm or less. High-resolution electron microscopic studies imply that the structure of nanocrystalline Ge of diameter ≤ 4 nm differs from the diamond structure. These data suggest that new nanostructure crystalline Ge having a character of direct optical transition exhibits the visible photoluminescence.


1969 ◽  
Vol 22 (11) ◽  
pp. 2301 ◽  
Author(s):  
CR Ailwood ◽  
PE Fielding

The characterization of various mixtures obtained by fractional recrystallization of sulphur-selenium melts is described. Optical absorption spectra of thin films, mass spectra, and X-ray diffraction data reveal two distinct ranges of homogeneity, the break occurring at 14 at. % Se. The optical absorption edge of crystals containing less than 14 at. % Se varies linearly with composition. A direct optical transition to the conduction band of S8 and a transition due to trapped excitons are thought to contribute to the excessive width of this absorption edge.


2016 ◽  
Vol 30 (10) ◽  
pp. 1650139
Author(s):  
Kai Liang ◽  
Hui Zhao

First-principles calculations of ternary Sr2ZnN2 compound using density-functional theory (DFT) method within the generalized gradient approximation (GGA) has been performed. Based on the optimized structural parameter, the electronic properties and optical properties have been researched. The calculated lattice constants are in agreement with the experimental and theoretical results. The electronic structure have been investigated throughout the calculated band structure and density of states (DOS). It shows that this compound belongs to the semiconductors with a band gap of about 0.775[Formula: see text]eV. Furthermore, in order to clarify the optical transition of this material, the optical properties such as dielectric function, absorption coefficient, reflectivity, refractive index and energy-loss function at different pressures of 0, 10 and 20[Formula: see text]GPa in the energy range 0–20[Formula: see text]eV were performed and discussed. It shows that Sr2ZnN2 is a strong anisotropy material and the imaginary part of dielectric function shifts to higher energy region as the pressure increases. The square of calculated static refractive index is equal to static dielectric function, which corresponds to the theory formula. In conclusion, pressure is a effective method to change the electronic structure and optical properties.


1967 ◽  
Vol 45 (2) ◽  
pp. 255-261 ◽  
Author(s):  
A. G. Thompson ◽  
J. C. Woolley

Values of E0, the lowest direct optical transition, are available for several III-V alloy systems, from measurements of optical absorption, electroreflectance, electroluminescence, etc. It is shown that in all available cases the variation of E0 with composition can be fitted very well to an equation of the form E0 = A + Bx + Cx2, where x is the mole fraction of one component compound. Such a relation is expected from a virtual-crystal type of analysis.If E0m is the mean of the energy gaps of the component compounds of the system, it is found that an empirical relation of the form [Formula: see text] appears to hold where α is approximately 0.3 eV3/2.


1993 ◽  
Vol 32 (Part 2, No. 8B) ◽  
pp. L1148-L1149
Author(s):  
Yukio Osaka ◽  
Fumitaka Toyomura ◽  
Hideyuki Katayama ◽  
Kenji Kohno

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