Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor

JETP Letters ◽  
2014 ◽  
Vol 100 (4) ◽  
pp. 256-261 ◽  
Author(s):  
I. G. Gorlova ◽  
S. G. Zybtsev ◽  
V. Ya. Pokrovskii
Keyword(s):  
Power Law ◽  
Layered Semiconductor ◽  
One Dimensional ◽  
Current Voltage ◽  
Current Voltage Characteristics

Applicability of the power-law current–voltage characteristics to melt-textured YBa2Cu3O7−δ superconductors

2004 ◽  
Vol 84 (4) ◽  
pp. 553-555 ◽  
Author(s):  
L. M. Fisher ◽  
A. V. Kalinov ◽  
T. T. Mnatsakanov ◽  
I. F. Voloshin ◽  
A. A. Levchenko ◽  
...  
Keyword(s):  
Power Law ◽  
Current Voltage ◽  
Current Voltage Characteristics

Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

scholarly journals Проверка применимости закона полевой эмиссии к исследованию многоострийных полевых эмиттеров методом анализа степени предэкспоненциального множителя напряжения

2019 ◽  
Vol 45 (18) ◽  
pp. 13
Author(s):  
Е.О. Попов ◽  
А.Г. Колосько ◽  
С.В. Филиппов
Keyword(s):  
Experimental Data ◽  
Carbon Nanotubes ◽  
Statistical Analysis ◽  
Field Emission ◽  
Power Law ◽  
Constant Voltage ◽  
Current Voltage ◽  
Power Law Exponent ◽  
Emission Mode ◽  
Current Voltage Characteristics

A method for testing the compliance of experimental current-voltage characteristics with a cold field emission mode is described. The method is based on the variation of voltage power-law exponent in the semilogarithmic coordinates ln (I/U^k) vs1/U, as well as the statistical analysis of experimental data fluctuations. It is shown that the current-voltage characteristics obtained using the high-voltage fast-scanning technique have a better fit to the field emission law than the characteristics given by a slow scanning with a constant voltage. A multi-tip nanocomposite emitter based on carbon nanotubes was taken as a sample. For processing experimental data, it was proposed to use modified Fowler-Nordheim coordinates with a voltage power-law exponent of 1.24.

scholarly journals Локальные и интегральные свойства квазиодномерного сверхпроводника в режиме квантовых флуктуаций параметра порядка

2021 ◽  
Vol 63 (9) ◽  
pp. 1233
Author(s):  
К.Ю. Арутюнов ◽  
Я.С. Лехтинен ◽  
Д.О. Трефилов ◽  
А.А. Радкевич ◽  
А.Г. Семенов ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Point Of View ◽  
Nanometer Scale ◽  
One Dimensional ◽  
Nanoelectronic Devices ◽  
Local Characteristics ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
New Generation

Utilization of superconducting materials for the new generation of nanoelectronic devices seems extremely tempting from the point of view of the absence of Joule heating. However, in small systems, the role of fluctuations can be very significant. In this work, the transport properties of thin superconducting titanium nanostructures were studied experimentally and theoretically. It has been shown that quantum fluctuations of the order parameter have a dif-ferent impact on integral and local characteristics of a quasi-one-dimensional superconductor. In sufficiently thin nanowires, a finite electrical resistance can be observed at the lowest tem-peratures, while the tunneling current-voltage characteristics exhibit only slightly broadened gap singularity and a finite Josephson current. The observation is of fundamental importance for understanding the phenomenon of mesoscopic superconductivity and should be taken into account when designing nanometer scale cryoelectronic devices.

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