Applicability of the power-law current–voltage characteristics to melt-textured YBa2Cu3O7−δ superconductors

2004 ◽  
Vol 84 (4) ◽  
pp. 553-555 ◽  
Author(s):  
L. M. Fisher ◽  
A. V. Kalinov ◽  
T. T. Mnatsakanov ◽  
I. F. Voloshin ◽  
A. A. Levchenko ◽  
...  
1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.


Author(s):  
Е.О. Попов ◽  
А.Г. Колосько ◽  
С.В. Филиппов

A method for testing the compliance of experimental current-voltage characteristics with a cold field emission mode is described. The method is based on the variation of voltage power-law exponent in the semilogarithmic coordinates ln (I/U^k) vs1/U, as well as the statistical analysis of experimental data fluctuations. It is shown that the current-voltage characteristics obtained using the high-voltage fast-scanning technique have a better fit to the field emission law than the characteristics given by a slow scanning with a constant voltage. A multi-tip nanocomposite emitter based on carbon nanotubes was taken as a sample. For processing experimental data, it was proposed to use modified Fowler-Nordheim coordinates with a voltage power-law exponent of 1.24.


2020 ◽  
Vol 23 (4) ◽  
pp. 339-345
Author(s):  
A.K. Uteniyazov ◽  
◽  
A.Yu. Leyderman ◽  
R.A. Ayukhanov ◽  
E.S. Esenbaeva ◽  
...  

The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.


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