Determining Eigenfrequencies and Homogeneous Widths of Lines of Intermolecular Vibrations in Water and in Aqueous Solutions of Hydrogen Peroxide Using Raman Spectroscopy

2018 ◽  
Vol 124 (5) ◽  
pp. 660-667 ◽  
Author(s):  
A. V. Kraiskii ◽  
N. N. Mel’nik
1970 ◽  
Vol 48 (18) ◽  
pp. 2948-2948
Author(s):  
C. E. Burchill ◽  
I. S. Ginns

not available


1979 ◽  
Vol 18 (7) ◽  
pp. 1971-1973 ◽  
Author(s):  
Mark M. Morrison ◽  
Julian L Roberts ◽  
Donald T. Sawyer

1955 ◽  
Vol 3 (4) ◽  
pp. 379 ◽  
Author(s):  
W. V. Mayneord ◽  
W. Anderson ◽  
H. D. Evans ◽  
D. Rosen

2010 ◽  
Vol 184 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
Dongkyu Choi ◽  
O-Mi Lee ◽  
Seungho Yu ◽  
Seung-Woo Jeong

2004 ◽  
Vol 823 ◽  
Author(s):  
Julie Muyco ◽  
Timothy Ratto ◽  
Christine Orme ◽  
Joanna McKittrick ◽  
John Frangos

AbstractTitanium was exposed to dilute solutions of hydrogen peroxide (H2O2) to better characterize the interaction at the interface between the solution and metal. The intensity of light passing through films of known thickness of titanium on quartz was measured as a function of time in contact with H2O2in concentrations of 0.3% and 1.0%. An atomic force microscope (AFM) was used to record deflection-distance (force) curves as a probe approached the interface of titanium in contact with solution containing 0.3% of H2O2. The interaction layer measured using AFM techniques was much greater than the thickness of the titanium films used in this study. Raman spectroscopy taken during interaction shows the emergence of a Ti-peroxy gel and titania after 2 hours in contact with 0.3% H2O2solution.


2012 ◽  
Vol 217-219 ◽  
pp. 1141-1145 ◽  
Author(s):  
Wei Wang ◽  
Li Juan Zhao ◽  
Ping Xin Song ◽  
Ying Jiu Zhang

Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.


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