Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

2019 ◽  
Vol 127 (6) ◽  
pp. 1053-1056
Author(s):  
L. Ya. Karachinsky ◽  
I. I. Novikov ◽  
A. V. Babichev ◽  
A. G. Gladyshev ◽  
E. S. Kolodeznyi ◽  
...  
2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.


Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.


2018 ◽  
Author(s):  
Trystan Watson ◽  
Francesca De Rossi ◽  
Jenny Baker ◽  
David Beynon ◽  
Katherine Hooper ◽  
...  

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.


1997 ◽  
Author(s):  
Reinhard K. Erdmann
Keyword(s):  

2020 ◽  
Vol 12 (2) ◽  
pp. 02002-1-02002-3
Author(s):  
Pyare Lal ◽  
◽  
Garima Bhardwaj ◽  
Sandhya Kattayat ◽  
P. A. Alvi ◽  
...  
Keyword(s):  

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