Kinetics of Air Bubble Growth on a Silicon Substrate in Alcohol and Water–Alcohol Media

2021 ◽  
Vol 83 (4) ◽  
pp. 428-435
Author(s):  
N. E. Esipova ◽  
S. V. Itskov
2012 ◽  
Vol 56 (3) ◽  
pp. 676-683 ◽  
Author(s):  
A. Turbin-Orger ◽  
E. Boller ◽  
L. Chaunier ◽  
H. Chiron ◽  
G. Della Valle ◽  
...  

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.


2018 ◽  
Vol 54 (5) ◽  
pp. 840-844 ◽  
Author(s):  
A. A. Nikolaev ◽  
A. Batkhuyag ◽  
B. E. Goryachev

1974 ◽  
Vol 29 (11) ◽  
pp. 1697-1698 ◽  
Author(s):  
F. Mansilla ◽  
P. Martinez ◽  
J. Sancho

By using a conductometric method, the kinetics of the basic hydrolysis of benzyl benzoate in water-alcohol medium has been investigated. The second order rate constant follows the equation K = A exp {-E/RT} with A = 1.35·1010 l mol-1 min-1 and E = 14.5 kcal mol-1. A reaction mechanism is postulated, which is consistent with the experimental data.


1982 ◽  
Vol 71 (S1) ◽  
pp. S31-S31
Author(s):  
Gary M. Hansen ◽  
Lawrence A. Crum
Keyword(s):  

1984 ◽  
Vol 15 (3) ◽  
pp. 487-494 ◽  
Author(s):  
Binayak Panda ◽  
Paul Shewmon

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