Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
2007 ◽  
Vol 253 (6) ◽  
pp. 3053-3056 ◽  
Author(s):  
Joondong Kim ◽  
Alan M. Piwowar ◽  
Richard Nowak ◽  
Joseph A. Gradella ◽  
Wayne A. Anderson

1999 ◽  
Vol 337 (1-2) ◽  
pp. 55-58 ◽  
Author(s):  
B. Lee ◽  
L.J. Quinn ◽  
P.T. Baine ◽  
S.J.N. Mitchell ◽  
B.M. Armstrong ◽  
...  

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.


1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L548-L551 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Masaki Hara ◽  
Setsuo Usui

1997 ◽  
Vol 70 (3) ◽  
pp. 372-374
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Jae-Hong Jun ◽  
Hong-Seok Choi ◽  
...  

1985 ◽  
Vol 57 (4) ◽  
pp. 1143-1146 ◽  
Author(s):  
Hitoshi Arai ◽  
Shigeto Kohda ◽  
Yoshitaka Kitano

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