TEM investigation of the role of the polycrystalline-silicon film/substrate interface in high quality radio frequency silicon substrates

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l548 ◽

1990 ◽

Vol 29 (Part 2, No. 4) ◽

pp. L548-L551 ◽

Cited By ~ 22

Author(s):

Toshiyuki Sameshima ◽

Masaki Hara ◽

Setsuo Usui

Keyword(s):

Polycrystalline Silicon ◽

Silicon Film ◽

Pulsed Laser ◽

Polycrystalline Silicon Film

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Initial stage of semiinsulating polycrystalline silicon film growth

Russian Microelectronics ◽

10.1134/s1063739708060012 ◽

2008 ◽

Vol 37 (6) ◽

pp. 349-355

Author(s):

A. S. Turtsevich ◽

O. Yu. Nalivaiko ◽

V. A. Solodukha ◽

V. V. Glukhmanchuk ◽

N. G. Tsirkunova ◽

...

Keyword(s):

Polycrystalline Silicon ◽

Film Growth ◽

Silicon Film ◽

Initial Stage ◽

Polycrystalline Silicon Film

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Effects of electron cyclotron resonance plasma thermal oxidation on the properties of polycrystalline silicon film

Applied Physics Letters ◽

10.1063/1.114363 ◽

1995 ◽

Vol 67 (13) ◽

pp. 1880-1882 ◽

Cited By ~ 12

Author(s):

Jung‐Yeal Lee ◽

Chul‐Hi Han ◽

Choong‐Ki Kim ◽

Bok‐Ki Kim

Keyword(s):

Thermal Oxidation ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Polycrystalline Silicon Film ◽

Resonance Plasma

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Role of substrate interface energy in the synthesis of high quality uniform layered ReS2

Applied Surface Science ◽

10.1016/j.apsusc.2019.07.075 ◽

2019 ◽

Vol 493 ◽

pp. 1215-1223 ◽

Cited By ~ 4

Author(s):

Muhammad Hafeez ◽

Shafiq ur Rehman ◽

Awais Siddique Saleemi ◽

Muhammad Saeed ◽

Ling Zhu

Keyword(s):

Interface Energy ◽

High Quality ◽

Substrate Interface

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Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

MRS Proceedings ◽

10.1557/proc-654-aa3.33.1 ◽

2000 ◽

Vol 654 ◽

Author(s):

M. P. Singh ◽

G. Raghavan ◽

A. K. Tyagi ◽

S. A. Shivashankar

Keyword(s):

Silicon Film ◽

Cross Sectional ◽

Theoretical Simulation ◽

Substrate Interface ◽

Alumina Films ◽

Mocvd Precursors ◽

Film Substrate ◽

Film Interface ◽

Ellipsometry Data ◽

Conventional Tool

AbstractAn attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

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