Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer

2014 ◽  
Vol 48 (11) ◽  
pp. 1507-1511
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
A. V. Medvedev ◽  
A. A. Dukin ◽  
V. G. Golubev
2021 ◽  
Vol 2015 (1) ◽  
pp. 012101
Author(s):  
Dmitry V Obydennov ◽  
Ekaterina I Elyas ◽  
Daniil A Shilkin ◽  
Vitaly V Yaroshenko ◽  
Dmitriy A Zuev ◽  
...  

Abstract Over the past two decades, nanosized diamond particles with various luminescent defects have found numerous applications in many areas from quantum technologies to medical science. The size and shape of diamond particles can affect drastically the luminescence of embedded color centers. Here we study diamond particles of 250–450 nm in size containing silicon-vacancy (SiV) centers. Using dark-field scattering spectroscopy, we found that fundamental Mie resonances are excited in the spectral range of interest. We then measured the fluorescence saturation curves under continuous excitation to estimate the effects of the excitation and Purcell factor enhancement on the luminescent properties of the studied particles. The results show that the saturation excitation intensity differs by several times for particles of different sizes which is well explained by the numerical model that takes into account both the Parcell factor enhancement and resonant excitation.


2014 ◽  
Vol 48 (2) ◽  
pp. 268-271 ◽  
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
M. A. Baranov ◽  
A. V. Baranov ◽  
...  

2021 ◽  
Vol 218 (19) ◽  
pp. 2170054
Author(s):  
Konosuke Shimazaki ◽  
Hiroki Kawaguchi ◽  
Hideaki Takashima ◽  
Takuya Fabian Segawa ◽  
Frederick T.-K. So ◽  
...  

Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...


2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.


2019 ◽  
Vol 28 (7) ◽  
pp. 076103
Author(s):  
Hang-Cheng Zhang ◽  
Cheng-Ke Chen ◽  
Ying-Shuang Mei ◽  
Xiao Li ◽  
Mei-Yan Jiang ◽  
...  

Author(s):  
Haritha Kambalathmana ◽  
Assegid Mengistu Flatae ◽  
Stefano Lagomarsino ◽  
Hossam Galal ◽  
Francesco Tantussi ◽  
...  

2019 ◽  
Vol 125 (7) ◽  
Author(s):  
E. J. Di Liscia ◽  
M. Reinoso ◽  
F. Álvarez ◽  
H. Huck

2017 ◽  
Vol 214 (11) ◽  
pp. 1700586 ◽  
Author(s):  
Jonas Nils Becker ◽  
Christoph Becher

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