scholarly journals Purcell enhancement of fluorescence from silicon-vacancy color centers in Mie-resonant luminescent diamond particles

2021 ◽  
Vol 2015 (1) ◽  
pp. 012101
Author(s):  
Dmitry V Obydennov ◽  
Ekaterina I Elyas ◽  
Daniil A Shilkin ◽  
Vitaly V Yaroshenko ◽  
Dmitriy A Zuev ◽  
...  
Keyword(s):  
Medical Science ◽  
Luminescent Properties ◽  
Dark Field ◽  
Excitation Intensity ◽  
Color Centers ◽  
Purcell Factor ◽  
Silicon Vacancy ◽  
The Past ◽  
Diamond Particles ◽  
Continuous Excitation

Abstract Over the past two decades, nanosized diamond particles with various luminescent defects have found numerous applications in many areas from quantum technologies to medical science. The size and shape of diamond particles can affect drastically the luminescence of embedded color centers. Here we study diamond particles of 250–450 nm in size containing silicon-vacancy (SiV) centers. Using dark-field scattering spectroscopy, we found that fundamental Mie resonances are excited in the spectral range of interest. We then measured the fluorescence saturation curves under continuous excitation to estimate the effects of the excitation and Purcell factor enhancement on the luminescent properties of the studied particles. The results show that the saturation excitation intensity differs by several times for particles of different sizes which is well explained by the numerical model that takes into account both the Parcell factor enhancement and resonant excitation.

Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer

2014 ◽  
Vol 48 (11) ◽  
pp. 1507-1511
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
A. V. Medvedev ◽  
A. A. Dukin ◽  
V. G. Golubev
Keyword(s):  
Active Layer ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Diamond Particles ◽  
Planar Microcavity

Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal

2014 ◽  
Vol 48 (2) ◽  
pp. 268-271 ◽  
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
M. A. Baranov ◽  
A. V. Baranov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthetic Opal ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Diamond Particles

Applications of Through-Focus Dark Field Image Shifts to Phase Identification

1975 ◽  
Vol 33 ◽  
pp. 178-179
Author(s):  
Prakash Rao
Keyword(s):  
Dark Field Image ◽  
Thin Foil ◽  
Dark Field ◽  
The Other ◽  
Stereo Image ◽  
Phase Identification ◽  
The Past ◽  
Field Electron Microscopy ◽  
Dark Field Electron ◽  
Recent Extension

Image shifts in out-of-focus dark field images have been used in the past to determine, for example, epitaxial relationships in thin films. A recent extension of the use of dark field image shifts has been to out-of-focus images in conjunction with stereoviewing to produce an artificial stereo image effect. The technique, called through-focus dark field electron microscopy or 2-1/2D microscopy, basically involves obtaining two beam-tilted dark field images such that one is slightly over-focus and the other slightly under-focus, followed by examination of the two images through a conventional stereoviewer. The elevation differences so produced are usually unrelated to object positions in the thin foil and no specimen tilting is required.In order to produce this artificial stereo effect for the purpose of phase separation and identification, it is first necessary to select a region of the diffraction pattern containing more than just one discrete spot, with the objective aperture.

scholarly journals Evaluating Metrics Applied to the Medical Science Liaison (MSL) Role: A Survey-Based Study of Canadian MSL Leaders

2021 ◽  
Author(s):  
Munaza Saleem ◽  
Lisa Cesario ◽  
Lisa Wilcox ◽  
Marsha Haynes ◽  
Simon Collin ◽  
...  
Keyword(s):  
Health Care ◽  
Health Care Professional ◽  
Online Survey ◽  
Medical Science ◽  
Specialty Care ◽  
Product Lifecycle ◽  
The Past ◽  
Data Analyses ◽  
Quantitative Metrics ◽  
Frequency Of Use

Abstract Introduction Metrics utilized within the Medical Science Liaison (MSL) role are plentiful and traditionally quantitative. We sought to understand the current use and value of metrics applied to the MSL role, including the use of qualitative metrics. Methods We developed a list of 70 MSL leaders working in Canada, spanning 29 companies. Invitations were emailed Jun 16, 2020 and the 25-question online survey was open for 3 weeks. Questions were designed to assess demographics as well as how and why metrics are applied to the MSL role. Data analyses were descriptive. Results Responses were received from 44 leaders (63%). Of the 42 eligible, 45% had ≤ 2 years of experience as MSL leaders and 86% supported specialty care products over many phases of the product lifecycle. A majority (69%) agreed or strongly agreed that metrics are critical to understanding whether an MSL is delivering value, and 98% had used metrics in the past year. The most common reason to use metrics was ‘to show value/impact of MSLs to leadership’ (66%). The most frequently used metric was ‘number of health-care professional (HCP) interactions’, despite this being seen as having moderate value. Quantitative metrics were used more often than qualitative, although qualitative were more often highly valued. Conclusion The data collected show a lack of agreement between the frequency of use for some metrics and their value in demonstrating the contribution of an MSL. Overall, MSL leaders in our study felt qualitative metrics were a better means of showing the true impact of MSLs.

scholarly journals Primary Infertility secondary to Testicular Microlithiasis

2017 ◽  
Vol 16 (1) ◽  
pp. 178-180
Author(s):  
Imtiaz Shah ◽  
Fayaz Khan ◽  
Mohammad Zaieem ◽  
Farhan Khan ◽  
Suhail Khan ◽  
...  
Keyword(s):  
Risk Factors ◽  
Ultrasound Examination ◽  
Medical Science ◽  
Chromosomal Anomalies ◽  
Conservative Approach ◽  
Adult Males ◽  
Testicular Microlithiasis ◽  
Testicular Tumors ◽  
The Past ◽  
High Risk Factors

Testicular microlithiasis is an uncommon entity among adult males, resulting from tubular calcification. Reported incidence of testicular microlithiasis has been highly variable in the past decade due to increasing frequency of ultrasound examination of scrotal and testicular conditions. Testicular microlithiasis is associated with many benign and malignant conditions of testes. It is believed that in patients with Testicular microlithiasis conservative approach is warranted in absence of high risk factors, like contralateral testicular tumors, chromosomal anomalies and gonadal dysgenesis.Bangladesh Journal of Medical Science Vol.16(1) 2017 p.178-180

scholarly journals Historical perspective of neurology in Iran

2019 ◽  
Author(s):  
Shri Kant-Mishra ◽  
Hadi Mohammad Khanli ◽  
Golnoush Akhlaghipour ◽  
Ghazaleh Ahmadi Jazi ◽  
Shaweta Khosa1
Keyword(s):  
Historical Perspective ◽  
Medical Center ◽  
Medical Science ◽  
Early Period ◽  
Medieval Period ◽  
Neurologic Diseases ◽  
The Past ◽  
Modern Period ◽  
History Of ◽  
Modern Era

Iran is an ancient country, known as the cradle of civilization. The history of medicine in Iran goes back to the existence of a human in this country, divided into three periods: pre-Islamic, medieval, and modern period. There are records of different neurologic terms from the early period, while Zoroastrian (religious) prescription was mainly used until the foundation of the first medical center (Gondishapur). In the medieval period, with the conquest of Islam, prominent scientists were taught in Baghdad, like Avicenna, who referred to different neurologic diseases including stroke, paralysis, tremor, and meningitis. Several outstanding scientists developed the medical science of neurology in Iran, the work of whom has been used by other countries in the past and present. In the modern era, the Iranian Neurological Association was established with the efforts of Professor Jalal Barimani in 1991.

scholarly journals Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

2021 ◽  
Vol 218 (19) ◽  
pp. 2170054
Author(s):  
Konosuke Shimazaki ◽  
Hiroki Kawaguchi ◽  
Hideaki Takashima ◽  
Takuya Fabian Segawa ◽  
Frederick T.-K. So ◽  
...  
Keyword(s):  
High Temperature ◽  
Detonation Nanodiamonds ◽  
Color Centers ◽  
High Temperature Annealing ◽  
Silicon Vacancy

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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