Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application

2019 ◽  
Vol 53 (4) ◽  
pp. 447-451 ◽  
Author(s):  
K. Deva Arun Kumar ◽  
S. Valanarasu ◽  
S. Rex Rosario
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Electronic Application ◽  
Azo Thin Film

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Characterization of SiO2 Thin Film Obtained by the Sol-Gel Route from TEOS and Triton X45

Langmuir ◽  
1995 ◽  
Vol 11 (10) ◽  
pp. 3970-3974 ◽  
Author(s):  
P. Piaggio ◽  
A. Bottino ◽  
G. Capannelli ◽  
E. Carosini ◽  
A. Julbe
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Sio2 Thin Film

Sol–gel synthesis and characterization of Ag2S nanocrystallites in silica thin film glasses

1999 ◽  
Vol 9 (11) ◽  
pp. 2893-2898 ◽  
Author(s):  
Lidia Armelao ◽  
Paolo Colombo ◽  
Monica Fabrizio ◽  
Silvia Gross ◽  
Eugenio Tondello
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Silica Thin Film ◽  
Sol Gel Synthesis

Characterization of spinel Co3O4 and Li-doped Co3O4 thin film electrocatalysts prepared by the sol–gel route

2000 ◽  
Vol 45 (25-26) ◽  
pp. 4359-4371 ◽  
Author(s):  
F Švegl ◽  
B Orel ◽  
I Grabec-Švegl ◽  
V Kaučič
Keyword(s):  
Thin Film ◽  
Sol Gel

Preparation and Characterization of ZnO Thin Film Doped with Eu via Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 585-588 ◽  
Author(s):  
Dao Qi Xue ◽  
Jun Ying Zhang ◽  
Hai Bing Feng ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Luminescent Properties ◽  
Dip Coating ◽  
Luminescence Spectra ◽  
Zno Thin Film ◽  
Excitation Spectra ◽  
Coating Method ◽  
Dip Coating Method

ZnO:Eu3+ films were obtained by dip-coating method and influence of heat treatment on luminescent properties was investigated. Emission and excitation spectra revealed that the organic and nitrate molecules, which adhered on the surface of films when the samples were treated at lower temperatures (300oC-400oC), played an important role on the luminescent properties. At higher temperatures (500oC-800oC), the luminescence spectra of ZnO and Eu3+ were quite different with those treated at lower temperatures. Energy transferred from ZnO host to Eu3+ was obviously observed in the emission and excitation spectra. The luminescence mechanism was discussed briefly.

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