Features of the Frequency Dependence of Capacitance–Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a p–n Junction with an Antireflective Film of Porous Silicon

2018 ◽  
Vol 63 (12) ◽  
pp. 1824-1828
Author(s):  
V. V. Tregulov
Keyword(s):  
Porous Silicon ◽  
Frequency Dependence ◽  
Semiconductor Structure ◽  
Photoelectric Converter ◽  
Antireflective Film ◽  
Capacitance Voltage

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Application of Photoacoustic Spectroscopy to Porous Silicon

1999 ◽  
Vol 560 ◽  
Author(s):  
Masato Ohmukai ◽  
Akiharu Kobayashi ◽  
Nobutomo Uehara ◽  
Tetsuya Yamazaki ◽  
Shinji Fujihara ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Frequency Dependence ◽  
Relaxation Process ◽  
Silicon Substrate ◽  
Photoacoustic Spectroscopy ◽  
Layer Model ◽  
Radiative Relaxation ◽  
Two Layer Model

ABSTRACTWe are investigating applicability of photoacoustic (PA) spectroscopy to porous silicon. Since PA spectroscopy is based on a non-radiative relaxation process, the measurement is of importance as a counterpart to photoluminescent spectroscopy. We studied a dependence of a PA amplitude on a chopping frequency and discussed the influence of a PA signal originated in a silicon substrate. The frequency dependence was elucidated with a two-layer model. Differences in PA spectra are correlated with a photoluminescent efficiency. From the correlation, we believe that non-radiative centers quench the efficiency.

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