Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n +–p-junction and an antireflective porous silicon film

2016 ◽  
Vol 61 (11) ◽  
pp. 1694-1697 ◽  
Author(s):  
V. V. Tregulov ◽  
V. A. Stepanov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Porous Silicon ◽  
Current Flow ◽  
Silicon Film ◽  
Semiconductor Structure ◽  
Photoelectric Converter ◽  
Flow Mechanisms

scholarly journals Дефекты с глубокими уровнями в фотоэлектрическом преобразователе с антиотражающей пленкой пористого кремния, сформированной окрашивающим химическим травлением

2019 ◽  
Vol 45 (4) ◽  
pp. 24
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Porous Silicon ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Film Formation ◽  
Silicon Film ◽  
Semiconductor Structure ◽  
Spectroscopy Technique ◽  
Photovoltaic Converter ◽  
Transient Spectroscopy ◽  
Stain Etching

AbstractDefects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.

scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Magnetic Properties of Ferrous Ferric Oxide Confined in Porous Silicon

2010 ◽  
Vol 663-665 ◽  
pp. 1142-1145
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng
Keyword(s):  
Electron Microscopy ◽  
Magnetic Properties ◽  
Iron Oxide ◽  
Porous Silicon ◽  
Ferrous Iron ◽  
Silicon Film ◽  
X Ray ◽  
Loop Measurement ◽  
Scanning Electron

During the chemical synthesis nanometer-sized particles of ferrous iron oxide were in situ infiltrated into the mesopores in a porous silicon film. The microstructures of porous silicon and the magnetic properties of the nanometer-sized particles of the ferrous iron oxide were characterized with scanning electron microscopy, X-ray diffractometry, and the hysteresis loop measurement, respectively. Our results have demonstrated that the magnetic properties of the nanometer-sized Fe3O4 particles can be dramatically modified when they are confined into the mesopores of the porous silicon film.

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