Current Transmission Mechanisms in the Semiconductor Structure of a Photoelectric Transducer with an n+–p Junction and an Antireflection Porous Silicon Film Formed by Color Etching

2019 ◽  
Vol 64 (5) ◽  
pp. 686-692
Author(s):  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Porous Silicon ◽  
Silicon Film ◽  
Semiconductor Structure ◽  
Photoelectric Transducer ◽  
Transmission Mechanisms ◽  
Current Transmission

scholarly journals Механизмы токопрохождения в полупроводниковой структуре фотоэлектрического преобразователя с n-=SUP=-+-=/SUP=--p-переходом и антиотражающей пленкой пористого кремния, сформированной методом окрашивающего травления

2019 ◽  
Vol 89 (5) ◽  
pp. 737
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Film Growth ◽  
Electrochemical Etching ◽  
Silicon Single Crystal ◽  
Growth Time ◽  
Photoelectric Transducer ◽  
Transmission Mechanisms ◽  
Current Voltage ◽  
Current Transmission ◽  
Range Of Values ◽  
Continuous Range

AbstractWe have studied experimental samples of photoelectric transducers with an n ^+– p junction based on a silicon single crystal and an antireflection porous silicon (por-Si) film formed by color chemical etching in a HF : KMnO_4 : C_2H_5OH etcher. It is shown that for KMnO_4 oxidant concentrations of 0.025 and 0.040 M, the por-Si film growth time at which the maximal efficiency of the photoelectric transducer is reached can be substantially increased as compared to that attained using anode electrochemical etching. For investigating the current transmission mechanisms, we have measured the temperature dependence of forward- and backward-bias current–voltage branches. The existence of several current transmission mechanisms has been established. It is found that traps with activation energy distributed in a continuous range of values considerably affect the current transmission.

scholarly journals Дефекты с глубокими уровнями в фотоэлектрическом преобразователе с антиотражающей пленкой пористого кремния, сформированной окрашивающим химическим травлением

2019 ◽  
Vol 45 (4) ◽  
pp. 24
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Porous Silicon ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Film Formation ◽  
Silicon Film ◽  
Semiconductor Structure ◽  
Spectroscopy Technique ◽  
Photovoltaic Converter ◽  
Transient Spectroscopy ◽  
Stain Etching

AbstractDefects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.

Magnetic Properties of Ferrous Ferric Oxide Confined in Porous Silicon

2010 ◽  
Vol 663-665 ◽  
pp. 1142-1145
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng
Keyword(s):  
Electron Microscopy ◽  
Magnetic Properties ◽  
Iron Oxide ◽  
Porous Silicon ◽  
Ferrous Iron ◽  
Silicon Film ◽  
X Ray ◽  
Loop Measurement ◽  
Scanning Electron

During the chemical synthesis nanometer-sized particles of ferrous iron oxide were in situ infiltrated into the mesopores in a porous silicon film. The microstructures of porous silicon and the magnetic properties of the nanometer-sized particles of the ferrous iron oxide were characterized with scanning electron microscopy, X-ray diffractometry, and the hysteresis loop measurement, respectively. Our results have demonstrated that the magnetic properties of the nanometer-sized Fe3O4 particles can be dramatically modified when they are confined into the mesopores of the porous silicon film.

Comparative Study Of The Growth Curves Of B. subtilis, K. pneumoniae, C. xerosis And E. coli Bacteria In Medium Containing Nanometric Silicon Particles

2002 ◽  
Vol 737 ◽  
Author(s):  
Lilyanna Pérez ◽  
Marjorie Flores ◽  
J. Avalos ◽  
L. San Miguel ◽  
O. Resto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Growth Curve ◽  
Silicon Nanoparticles ◽  
Silicon Film ◽  
Growth Curves ◽  
Bacterial Strains ◽  
E Coli ◽  
Standard Curve ◽  
Nanometric Particles ◽  
Silicon Particles

ABSTRACTIn this research nanometric particles from luminescent (625nm) porous silicon film were synthesized. This particles were later inoculated in bacterial strains of B. subtilis (BSi) and K. pneumoniae (KSi). A comparison of the behavior of their growth curve and the ones reported for C. xerosis (XSi) and E. coli (ESi) in presence of silicon nanoparticles is presented. The growth curve of BSi, as well as the KSi, present changes compared to their standard curves. The BSi growth curve grows below the standard curve after the fifth hour, while in the KSi this happens after the eighth hour. Based on our preliminary findings we can speculate that at this point in time a critical population is present, and this may give rise to the possible incorporation of the silicon particles by the bacteria, or a possible pleomorphism inhibits reproduction. The stationary region, in both cases, takes place sooner than in the standard curve. No significant oscillations are observed in any case, which differs form the XSi curve, were oscillations of intervals of almost 1 hour were reported. In addition, these curves have a different behavior when compared to the ESi growth curve, in which no significant differences between the standard and the particle containing sample were reported.

Effect of the composition of electrolyte on separation of porous silicon film by electrochemical etching

2003 ◽  
Vol 197 (2) ◽  
pp. 507-511 ◽  
Author(s):  
C. S. Solanki ◽  
R. R. Bilyalov ◽  
J. Poortmans ◽  
J.-P. Celis ◽  
J. Nijs
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Silicon Film ◽  
Effect Of The Composition

Electrochemically Deposited Aluminum in Template of Porous Silicon Film

2010 ◽  
Vol 663-665 ◽  
pp. 1032-1035
Author(s):  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
High Surface ◽  
Silicon Film ◽  
Volume Ratio ◽  
Deposition Condition ◽  
Sem Images ◽  
Interesting Phenomenon ◽  
Electrochemically Deposited ◽  
The One

In this article, we report on the observations that in the aqueous electrolyte of aluminum nitrate, the thin metallic conducting films on both internal and external surface of porous silicon (PS) thin films that emit visible photoluminescence at room temperature prior to electrochemical deposition have been obtained under electrochemical deposition condition. Add to this high surface-to-volume ratio and these make it a good candidate for the catalyst supporter. We have investigated the surface morphology of PS after the interval of about 30 hours of electrochemically deposited aluminum by means of scanning electron microscopy (SEM). It has been shown from SEM images that not only micrometer-sized pores are smoothed by deposition of aluminum microcrystal, but also the presences of semi-sphere aluminum microcrystal which rooted in the tip of micrometer-sized pores are observed. On the one hand, this extremely interesting phenomenon which the micrometer-sized pores are smoothed may be explained in terms of principle of electrochemical deposition; on the other hand, we have laid the formation mechanism of semi-spherical aluminum microcrystal at the door of Gibbs free energy.

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