Photosensitivity of thin-film structures based on CuIn3Se5 and CuIn5Se8 ternary semiconductor compounds

2007 ◽  
Vol 33 (2) ◽  
pp. 111-113 ◽  
Author(s):  
I. V. Bodnar’ ◽  
V. F. Gremenok ◽  
Yu. A. Nikolaev ◽  
V. Yu. Rud’ ◽  
Yu. V. Rud’ ◽  
...  
Keyword(s):  
Thin Film ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds

Ordering in Compound Semiconductors: The Role of Transmission Electron Microscopy

1998 ◽  
Vol 523 ◽  
Author(s):  
D. S. Su ◽  
A. T. Tham ◽  
P. Schubert-Bischoff ◽  
I. Hähnert ◽  
W. Neumann ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structure Model ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds ◽  
Long Range Ordering

AbstractIn this paper, the ordering of ternary semiconductor compounds is briefly reviewed by means of a coordination polyhedron model. Long-range ordering of chalcopyrite and CuAu-type structures can be represented as an array of repeating A2B2 tetrahedra. A CuAu-type ordered phase in a chalcopyrite AIBIIICVI2 compound is surrounded by an A3B+ AB3 boundary, whereas a CuPt-type ordered phase in a zinc-blende (A, B)IIICV compound is surrounded mainly by A2B2 type tetrahedra and thus restricted in size. Following the description of the ordered structure model, the detection of the asymmetry in ordering directions in (A, B)IIICV compounds is discussed. Some examples that employ transmission electron microscopy are presented.

scholarly journals XXIV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 10-13 марта 2020 г. Анализ фононных мод и электрон-фононного взаимодействия в квантово-каскадных лазерных гетероструктурах

2020 ◽  
Vol 54 (8) ◽  
pp. 780
Author(s):  
Ан.А. Афоненко ◽  
А.А. Афоненко ◽  
Д.В. Ушаков ◽  
А.А. Дубинов
Keyword(s):  
Phase Shift ◽  
Phonon Modes ◽  
Quantum Energy ◽  
Quantum Cascade ◽  
Scattering Rate ◽  
Interband Scattering ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds ◽  
Range Of Variation

The phonon modes of quantum cascade heterostructures based on binary and ternary semiconductor compounds are modeled. The dependences of the frequencies of the interface phonon modes of the structure on the wave vector in the plane of the layers and on the phase shift in the period of the superlattice are calculated. It was found that the range of variation of the quantum energy of the phonon modes of the GaAs/Al0.25Ga0.75As structure does not exceed 2 meV. The calculated resulting interband scattering rate in the structure, taking into account the interface and confined modes, practically does not differ from the calculations in the approximation of bulk phonons of the structure.

Characterization of thallium-based ternary semiconductor compounds for radiation detection

2012 ◽  
Author(s):  
Zhifu Liu ◽  
John A. Peters ◽  
Sandy Nguyen ◽  
Maria Sebastian ◽  
Bruce W. Wessels ◽  
...  
Keyword(s):  
Radiation Detection ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds

Novel photocatalytic water splitting solar-to-hydrogen energy conversion: CdLa2S4 and CdLa2Se4 ternary semiconductor compounds

2018 ◽  
Vol 20 (13) ◽  
pp. 8848-8858 ◽  
Author(s):  
A. H. Reshak
Keyword(s):  
Visible Light ◽  
Energy Conversion ◽  
Ab Initio ◽  
Water Splitting ◽  
Light Illumination ◽  
Hydrogen Energy ◽  
Visible Light Illumination ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds

Comprehensive ab initio calculations from first- to second-principles methods are performed to investigate the suitability of non-centro-symmetric CdLa2S4 and CdLa2Se4 to be used as active photocatalysts under visible light illumination.

A Model for Estimating Chemical Potentials in Ternary Semiconductor Compounds: the Case of InGaAs

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2909-2914 ◽  
Author(s):  
Vadym Kulish ◽  
Wenyan Liu ◽  
Sergei Manzhos
Keyword(s):  
Defect Formation ◽  
Chemical Potential ◽  
Doped Semiconductors ◽  
Ternary Compounds ◽  
Chemical Potentials ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
Ternary Semiconductor Compounds ◽  
Approximate Treatment ◽  
Formation Energies

ABSTRACTIn ab initio modeling of doped semiconductors, estimation of defect formation energies involving substitutional sites of ternary compounds is ambiguous due to an approximate treatment of chemical potential of the substituted atoms. We propose a model of assigning fractions of the formation energy to individual atoms of a ternary semiconductor and test it on InGaAs. The accuracy of this approximation is on the order of 0.1 eV/atom and is expected to be sufficient for many practical purposes.

In2X3 (X=S, Se, Te) Semiconductor Thin Films

2017 ◽  
pp. 914-958
Author(s):  
Mahieddine Emziane ◽  
Rahana Yoosuf
Keyword(s):  
Thin Film ◽  
Recent Progress ◽  
Intimate Relationship ◽  
Chalcogen Atom ◽  
Film Research ◽  
Semiconductor Thin Films ◽  
Physico Chemical ◽  
Semiconductor Compounds ◽  
Chalcogenide Thin Film

Indium chalcogenide thin film semiconductor compounds In2X3 (with X being a chalcogen atom, i.e., S, Se, or Te) are important materials in many current technological applications such as solar cells, micro-batteries, memory devices, etc. This chapter reviews the recent progress in In2X3 (X = S, Se, or Te) thin film research and development, with a particular attention paid to their growth and processing methods and parameters, and the effects that these have on the films microstructure. The intimate relationship between their fabrication conditions and the resulting physico-chemical and functional properties is discussed. Finally, results pertaining to the fabrication and characterization of these thin film materials, as well as the main devices and applications based on them are also highlighted and discussed in this chapter.

In2X3 (X=S, Se, Te) Semiconductor Thin Films

2014 ◽  
pp. 226-267
Author(s):  
Mahieddine Emziane ◽  
Rahana Yoosuf
Keyword(s):  
Thin Film ◽  
Recent Progress ◽  
Intimate Relationship ◽  
Chalcogen Atom ◽  
Film Research ◽  
Semiconductor Thin Films ◽  
Physico Chemical ◽  
Semiconductor Compounds ◽  
Chalcogenide Thin Film

Indium chalcogenide thin film semiconductor compounds In2X3 (with X being a chalcogen atom, i.e., S, Se, or Te) are important materials in many current technological applications such as solar cells, micro-batteries, memory devices, etc. This chapter reviews the recent progress in In2X3 (X = S, Se, or Te) thin film research and development, with a particular attention paid to their growth and processing methods and parameters, and the effects that these have on the films microstructure. The intimate relationship between their fabrication conditions and the resulting physico-chemical and functional properties is discussed. Finally, results pertaining to the fabrication and characterization of these thin film materials, as well as the main devices and applications based on them are also highlighted and discussed in this chapter.

Characterization of Cadmium Zinc Tellurium Obtained by Modified - Bridgman Technique

1993 ◽  
Vol 324 ◽  
Author(s):  
D.R. Acosta ◽  
F. Rabago
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Bridgman Technique ◽  
Selected Area Electron Diffraction ◽  
Resolution Electron ◽  
Structural Details ◽  
Semiconductor Compounds ◽  
Ternary Semiconductor ◽  
The Stability

AbstractThe growth of ternary semiconductor compounds Cd1-ZZnx. Te leads to possible uses of this material like optoelectronic devices. In the present work we report the structural characterization of Cd0.96Zn0.04Te obtained by modified - Bridgman technique. Structural studies were carried out using Scanning Electron Microscopy (SEM) and Conventional and High Resolution Electron Microscopy (TEM and HREM, respectively). Selected Area Electron Diffraction (SAED) was used to determine local variations in composition. Characteristics of the growth of the bulk samples were observed and structural details that might be related with the stability of ternary phase were derived.

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