Antibacterial Activity Of ternary semiconductor compounds AgInSe2 Nanoparticles Synthesized by Simple Chemical Method

AbstractIn this paper, the ordering of ternary semiconductor compounds is briefly reviewed by means of a coordination polyhedron model. Long-range ordering of chalcopyrite and CuAu-type structures can be represented as an array of repeating A2B2 tetrahedra. A CuAu-type ordered phase in a chalcopyrite AIBIIICVI2 compound is surrounded by an A3B+ AB3 boundary, whereas a CuPt-type ordered phase in a zinc-blende (A, B)IIICV compound is surrounded mainly by A2B2 type tetrahedra and thus restricted in size. Following the description of the ordered structure model, the detection of the asymmetry in ordering directions in (A, B)IIICV compounds is discussed. Some examples that employ transmission electron microscopy are presented.

Download Full-text

XXIV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 10-13 марта 2020 г. Анализ фононных мод и электрон-фононного взаимодействия в квантово-каскадных лазерных гетероструктурах

Физика и техника полупроводников ◽

10.21883/ftp.2020.08.49625.01 ◽

2020 ◽

Vol 54 (8) ◽

pp. 780

Author(s):

Ан.А. Афоненко ◽

А.А. Афоненко ◽

Д.В. Ушаков ◽

А.А. Дубинов

Keyword(s):

Phase Shift ◽

Phonon Modes ◽

Quantum Energy ◽

Quantum Cascade ◽

Scattering Rate ◽

Interband Scattering ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds ◽

Range Of Variation

The phonon modes of quantum cascade heterostructures based on binary and ternary semiconductor compounds are modeled. The dependences of the frequencies of the interface phonon modes of the structure on the wave vector in the plane of the layers and on the phase shift in the period of the superlattice are calculated. It was found that the range of variation of the quantum energy of the phonon modes of the GaAs/Al0.25Ga0.75As structure does not exceed 2 meV. The calculated resulting interband scattering rate in the structure, taking into account the interface and confined modes, practically does not differ from the calculations in the approximation of bulk phonons of the structure.

Download Full-text

Characterization of thallium-based ternary semiconductor compounds for radiation detection

10.1117/12.928325 ◽

2012 ◽

Cited By ~ 3

Author(s):

Zhifu Liu ◽

John A. Peters ◽

Sandy Nguyen ◽

Maria Sebastian ◽

Bruce W. Wessels ◽

...

Keyword(s):

Radiation Detection ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds

Download Full-text

Novel photocatalytic water splitting solar-to-hydrogen energy conversion: CdLa2S4 and CdLa2Se4 ternary semiconductor compounds

Physical Chemistry Chemical Physics ◽

10.1039/c8cp00373d ◽

2018 ◽

Vol 20 (13) ◽

pp. 8848-8858 ◽

Cited By ~ 7

Author(s):

A. H. Reshak

Keyword(s):

Visible Light ◽

Energy Conversion ◽

Ab Initio ◽

Water Splitting ◽

Light Illumination ◽

Hydrogen Energy ◽

Visible Light Illumination ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds

Comprehensive ab initio calculations from first- to second-principles methods are performed to investigate the suitability of non-centro-symmetric CdLa2S4 and CdLa2Se4 to be used as active photocatalysts under visible light illumination.

Download Full-text

Ternary semiconductor compounds CuInS2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

Applied Surface Science ◽

10.1016/j.apsusc.2010.02.032 ◽

2010 ◽

Vol 256 (13) ◽

pp. 4365-4369 ◽

Cited By ~ 19

Author(s):

Shaoxiong Lin ◽

Xuezhao Shi ◽

Xin Zhang ◽

Huanhuan Kou ◽

Chunming Wang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds

Download Full-text

A Model for Estimating Chemical Potentials in Ternary Semiconductor Compounds: the Case of InGaAs

MRS Advances ◽

10.1557/adv.2017.356 ◽

2017 ◽

Vol 2 (51) ◽

pp. 2909-2914 ◽

Cited By ~ 2

Author(s):

Vadym Kulish ◽

Wenyan Liu ◽

Sergei Manzhos

Keyword(s):

Defect Formation ◽

Chemical Potential ◽

Doped Semiconductors ◽

Ternary Compounds ◽

Chemical Potentials ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds ◽

Approximate Treatment ◽

Formation Energies

ABSTRACTIn ab initio modeling of doped semiconductors, estimation of defect formation energies involving substitutional sites of ternary compounds is ambiguous due to an approximate treatment of chemical potential of the substituted atoms. We propose a model of assigning fractions of the formation energy to individual atoms of a ternary semiconductor and test it on InGaAs. The accuracy of this approximation is on the order of 0.1 eV/atom and is expected to be sufficient for many practical purposes.

Download Full-text

Photosensitivity of thin-film structures based on CuIn3Se5 and CuIn5Se8 ternary semiconductor compounds

Technical Physics Letters ◽

10.1134/s106378500702006x ◽

2007 ◽

Vol 33 (2) ◽

pp. 111-113 ◽

Cited By ~ 1

Author(s):

I. V. Bodnar’ ◽

V. F. Gremenok ◽

Yu. A. Nikolaev ◽

V. Yu. Rud’ ◽

Yu. V. Rud’ ◽

...

Keyword(s):

Thin Film ◽

Semiconductor Compounds ◽

Ternary Semiconductor ◽

Ternary Semiconductor Compounds

Download Full-text

Energy Band Gap Studies of CdS Nanomaterials

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.3.97 ◽

2008 ◽

Vol 3 ◽

pp. 97-102 ◽

Cited By ~ 17

Author(s):

Dinu Patidar ◽

K.S. Rathore ◽

N.S. Saxena ◽

Kananbala Sharma ◽

T.P. Sharma

Keyword(s):

Optical Absorption ◽

Band Gap ◽

Energy Band ◽

Chemical Method ◽

Optical Absorption Spectroscopy ◽

Cds Nanoparticles ◽

X Ray Diffraction ◽

Energy Band Gap ◽

X Ray ◽

Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

Download Full-text