Characterization of Cadmium Zinc Tellurium Obtained by Modified - Bridgman Technique
Keyword(s):
AbstractThe growth of ternary semiconductor compounds Cd1-ZZnx. Te leads to possible uses of this material like optoelectronic devices. In the present work we report the structural characterization of Cd0.96Zn0.04Te obtained by modified - Bridgman technique. Structural studies were carried out using Scanning Electron Microscopy (SEM) and Conventional and High Resolution Electron Microscopy (TEM and HREM, respectively). Selected Area Electron Diffraction (SAED) was used to determine local variations in composition. Characteristics of the growth of the bulk samples were observed and structural details that might be related with the stability of ternary phase were derived.
1986 ◽
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pp. 468-471
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