In2X3 (X=S, Se, Te) Semiconductor Thin Films

2014 ◽  
pp. 226-267
Author(s):  
Mahieddine Emziane ◽  
Rahana Yoosuf
Keyword(s):  
Thin Film ◽  
Recent Progress ◽  
Intimate Relationship ◽  
Chalcogen Atom ◽  
Film Research ◽  
Semiconductor Thin Films ◽  
Physico Chemical ◽  
Semiconductor Compounds ◽  
Chalcogenide Thin Film

Indium chalcogenide thin film semiconductor compounds In2X3 (with X being a chalcogen atom, i.e., S, Se, or Te) are important materials in many current technological applications such as solar cells, micro-batteries, memory devices, etc. This chapter reviews the recent progress in In2X3 (X = S, Se, or Te) thin film research and development, with a particular attention paid to their growth and processing methods and parameters, and the effects that these have on the films microstructure. The intimate relationship between their fabrication conditions and the resulting physico-chemical and functional properties is discussed. Finally, results pertaining to the fabrication and characterization of these thin film materials, as well as the main devices and applications based on them are also highlighted and discussed in this chapter.

In2X3 (X=S, Se, Te) Semiconductor Thin Films

2017 ◽  
pp. 914-958
Author(s):  
Mahieddine Emziane ◽  
Rahana Yoosuf
Keyword(s):  
Thin Film ◽  
Recent Progress ◽  
Intimate Relationship ◽  
Chalcogen Atom ◽  
Film Research ◽  
Semiconductor Thin Films ◽  
Physico Chemical ◽  
Semiconductor Compounds ◽  
Chalcogenide Thin Film

Indium chalcogenide thin film semiconductor compounds In2X3 (with X being a chalcogen atom, i.e., S, Se, or Te) are important materials in many current technological applications such as solar cells, micro-batteries, memory devices, etc. This chapter reviews the recent progress in In2X3 (X = S, Se, or Te) thin film research and development, with a particular attention paid to their growth and processing methods and parameters, and the effects that these have on the films microstructure. The intimate relationship between their fabrication conditions and the resulting physico-chemical and functional properties is discussed. Finally, results pertaining to the fabrication and characterization of these thin film materials, as well as the main devices and applications based on them are also highlighted and discussed in this chapter.

Physico-chemical characterization of multilayer YIG thin film deposited by rf sputtering

2010 ◽  
Vol 50 (1) ◽  
pp. 10502 ◽  
Author(s):  
B. Abdel Samad ◽  
M.-F. Blanc-Mignon ◽  
M. Roumie ◽  
A. Siblini ◽  
J. P. Chatelon ◽  
...  
Keyword(s):  
Thin Film ◽  
Rf Sputtering ◽  
Chemical Characterization ◽  
Physico Chemical

Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Transistors

2013 ◽  
Vol 60 (1) ◽  
pp. 327-332 ◽  
Author(s):  
Israel Mejia ◽  
Ana L. Salas-Villasenor ◽  
Dongkyu Cha ◽  
Husam N. Alshareef ◽  
Bruce E. Gnade ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Fabrication And Characterization ◽  
Mobility Solution ◽  
Chalcogenide Thin Film

Recent Progress in Microcrystalline Semiconductor Thin Films

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Tanaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Recent Progress ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Film Structure ◽  
Preparation Methods ◽  
Active Layers ◽  
Semiconductor Thin Films ◽  
Si Films

AbstractNanocrystalline/microcrystalline thin films prepared at relatively low temperatures by plasma-enhanced chemical vapor deposition (PECVD), in particular hydrogenated microcrystalline Si films (μc-Si:H), have attracted an increasing attention not only as potential materials for thin film solar cells, but also as active layers in thin film transistor arrays for flat panel displays. This paper reviews recent progress in the investigation of these materials; preparation methods, structural and optical properties, and electronic transports. Emphasis is placed on the understanding of the growth mechanism of μc-Si:H films as well as the microscopic characterization of the film structure.

Recent Progress in Solution-Processed Copper-Chalcogenide Thin-Film Solar Cells

2017 ◽  
Vol 6 (1) ◽  
pp. 46-59 ◽  
Author(s):  
Wenjie Li ◽  
Joel Ming Rui Tan ◽  
Shin Woei Leow ◽  
Stener Lie ◽  
Shlomo Magdassi ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Recent Progress ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Copper Chalcogenide ◽  
Chalcogenide Thin Film

Preparation and Characterization of Se–Te–Ag Chalcogenide Thin Film

2013 ◽  
Vol 3 (1) ◽  
pp. 70-72
Author(s):  
R. Vijayalakshmi ◽  
L. Bruno Chandrasekar ◽  
R. Chandramohan
Keyword(s):  
Thin Film ◽  
Chalcogenide Thin Film

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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