Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure

2015 ◽  
Vol 41 (2) ◽  
pp. 142-145 ◽  
Author(s):  
V. M. Lukashin ◽  
A. B. Pashkovskii ◽  
V. G. Lapin ◽  
S. V. Shcherbakov ◽  
K. S. Zhuravlev ◽  
...  
Keyword(s):  
Potential Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Point ◽  
Optimum Operating ◽  
Donor Acceptor ◽  
Gate Potential ◽  
Effect Transistor ◽  
Optimum Operating Point

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

N-type field-effect transistors based on layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors

2015 ◽  
Vol 3 (9) ◽  
pp. 1976-1981 ◽  
Author(s):  
Jun'ya Tsutsumi ◽  
Satoshi Matsuoka ◽  
Satoru Inoue ◽  
Hiromi Minemawari ◽  
Toshikazu Yamada ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electron Donors ◽  
Donor Acceptor ◽  
Effect Transistor

We report structural, electronic, and field-effect transistor characteristics of layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes.

Enhanced performance in isoindigo based organic small molecule field-effect transistors through solvent additives

2015 ◽  
Vol 3 (23) ◽  
pp. 5951-5957 ◽  
Author(s):  
Yu Jung Park ◽  
Jung Hwa Seo ◽  
Walaa Elsawy ◽  
Bright Walker ◽  
Shinuk Cho ◽  
...  
Keyword(s):  
Small Molecules ◽  
Small Molecule ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Donor Acceptor ◽  
Effect Transistor

We have investigated the field-effect transistor characteristics of a series of isoindigo based donor–acceptor–donor small molecules via solvent additives.

Synthesis, characterization, and field-effect transistor performance of naphtho[1,2-b:5,6-b′]dithiophene-based donor–acceptor copolymers

RSC Advances ◽  
2013 ◽  
Vol 3 (41) ◽  
pp. 18944 ◽  
Author(s):  
Shaowei Shi ◽  
Xiaodong Xie ◽  
Rui Qu ◽  
Song Chen ◽  
Liwei Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Donor Acceptor ◽  
Effect Transistor

Synthesis and field-effect transistor properties of a diseleno[3,2-b:2′,3′-d]silole-based donor–acceptor copolymer: investigation of chalcogen effect

2016 ◽  
Vol 7 (28) ◽  
pp. 4654-4660 ◽  
Author(s):  
Yu-Chieh Pao ◽  
Cheng-Tai Yang ◽  
Yu-Ying Lai ◽  
Wen-Chia Huang ◽  
Chain-Shu Hsu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Donor Acceptor ◽  
Effect Transistor

We have designed and synthesized a tricyclic diseleno[3,2-b:2′,3′-d]silole (DSS) wherein the 3,3′-position of a biselenophene is bridged by a dioctylsilyl moiety.

scholarly journals Photo-induced intramolecular charge transfer in an ambipolar field-effect transistor based on a π-conjugated donor–acceptor dyad

2013 ◽  
Vol 1 (25) ◽  
pp. 3985 ◽  
Author(s):  
Raphael Pfattner ◽  
Egon Pavlica ◽  
Michael Jaggi ◽  
Shi-Xia Liu ◽  
Silvio Decurtins ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Intramolecular Charge Transfer ◽  
Donor Acceptor ◽  
Effect Transistor
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