The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

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Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials ◽

10.1007/s11664-000-0068-6 ◽

2000 ◽

Vol 29 (3) ◽

pp. 306-310 ◽

Cited By ~ 17

Author(s):

Thomas Gehrke ◽

Kevin J. Linthicum ◽

Edward Preble ◽

Pradeep Rajagopal ◽

Carsten Ronning ◽

...

Keyword(s):

Gallium Nitride ◽

Epitaxial Growth ◽

Silicon Substrates

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Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.08.032 ◽

2011 ◽

Vol 334 (1) ◽

pp. 113-117 ◽

Cited By ~ 9

Author(s):

Kevin Goodman ◽

Vladimir Protasenko ◽

Jai Verma ◽

Tom Kosel ◽

Grace Xing ◽

...

Keyword(s):

Gallium Nitride ◽

Aluminum Oxide ◽

Epitaxial Growth ◽

Molecular Beam ◽

Atomic Layer ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

Journal de Physique IV (Proceedings) ◽

10.1051/jphyscol:1995520 ◽

1995 ◽

Vol 05 (C5) ◽

pp. C5-183-C5-190 ◽

Cited By ~ 3

Author(s):

S. E. Alexandrov ◽

A. Y. Kovalgin ◽

D. M. Krasovitskiy

Keyword(s):

Gallium Nitride ◽

Gas Phase ◽

Uv Spectroscopy

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335. Epitaxial growth of InxGa1−x solid solutions from the gas phase

Vacuum ◽

10.1016/0042-207x(74)92676-1 ◽

1974 ◽

Vol 24 (3) ◽

pp. 146

Keyword(s):

Epitaxial Growth ◽

Gas Phase ◽

Solid Solutions

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Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00836-3 ◽

2001 ◽

Vol 225 (2-4) ◽

pp. 134-140 ◽

Cited By ~ 50

Author(s):

Robert F. Davis ◽

T. Gehrke ◽

K.J. Linthicum ◽

T.S. Zheleva ◽

E.A. Preble ◽

...

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Epitaxial Growth

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Mechanisms of Molecular Beam Epitaxial Growth on Reconstructed Si{100}: Thermal and Energized Beams

MRS Proceedings ◽

10.1557/proc-141-419 ◽

1988 ◽

Vol 141 ◽

Cited By ~ 2

Author(s):

B. J. Garrison ◽

M. T. Miller ◽

D.W. Brenner

Keyword(s):

Molecular Dynamics ◽

Low Temperature ◽

Epitaxial Growth ◽

Gas Phase ◽

Molecular Beam ◽

Energy Deposition ◽

Amorphous Structure ◽

Molecular Beam Epitaxial ◽

Dynamics Simulations ◽

Molecular Beam Epitaxial Growth

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.

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